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Chapter 19 128 KB Flash Module (S12ZFTMRZ128K512V2)
MC9S12ZVM Family Reference Manual Rev. 1.3
Freescale Semiconductor
687
NVM Command Mode
— An NVM mode using the CPU to setup the FCCOB register to pass parameters
required for Flash command execution.
Phrase
— An aligned group of four 16-bit words within the P-Flash memory. Each phrase includes two
sets of aligned double words with each set including 7 ECC bits for single bit fault correction and double
bit fault detection within each double word.
P-Flash Memory
— The P-Flash memory constitutes the main nonvolatile memory store for applications.
P-Flash Sector
— The P-Flash sector is the smallest portion of the P-Flash memory that can be erased.
Each P-Flash sector contains 512 bytes.
Program IFR
— Nonvolatile information register located in the P-Flash block that contains the Version
ID, and the Program Once field.
19.1.2
Features
19.1.2.1
P-Flash Features
•
128 KB of P-Flash composed of one 128 KB Flash block divided into 256 sectors of 512 bytes
•
Single bit fault correction and double bit fault detection within a 32-bit double word during read
operations
•
Automated program and erase algorithm with verify and generation of ECC parity bits
•
Fast sector erase and phrase program operation
•
Ability to read the P-Flash memory while programming a word in the EEPROM memory
•
Flexible protection scheme to prevent accidental program or erase of P-Flash memory
19.1.2.2
EEPROM Features
•
512 bytes of EEPROM memory composed of one 512 bytes Flash block divided into 128 sectors
of 4 bytes
•
Single bit fault correction and double bit fault detection within a word during read operations
•
Automated program and erase algorithm with verify and generation of ECC parity bits
•
Fast sector erase and word program operation
•
Protection scheme to prevent accidental program or erase of EEPROM memory
•
Ability to program up to four words in a burst sequence
19.1.2.3
Other Flash Module Features
•
No external high-voltage power supply required for Flash memory program and erase operations
•
Interrupt generation on Flash command completion and Flash error detection
•
Security mechanism to prevent unauthorized access to the Flash memory
Содержание MC9S12ZVM series
Страница 116: ...Chapter 2 Port Integration Module S12ZVMPIMV1 MC9S12ZVM Family Reference Manual Rev 1 3 116 Freescale Semiconductor ...
Страница 242: ...Chapter 7 ECC Generation Module SRAM_ECCV1 MC9S12ZVM Family Reference Manual Rev 1 3 242 Freescale Semiconductor ...
Страница 384: ...Chapter 10 Supply Voltage Sensor BATSV3 MC9S12ZVM Family Reference Manual Rev 1 3 384 Freescale Semiconductor ...
Страница 484: ...Chapter 13 Programmable Trigger Unit PTUV2 MC9S12ZVM Family Reference Manual Rev 1 3 484 Freescale Semiconductor ...
Страница 662: ...Chapter 17 Gate Drive Unit GDUV4 MC9S12ZVM Family Reference Manual Rev 1 3 662 Freescale Semiconductor ...
Страница 684: ...Chapter 18 LIN Physical Layer S12LINPHYV2 MC9S12ZVM Family Reference Manual Rev 1 3 684 Freescale Semiconductor ...
Страница 740: ...Chapter 19 128 KB Flash Module S12ZFTMRZ128K512V2 MC9S12ZVM Family Reference Manual Rev 1 3 740 Freescale Semiconductor ...
Страница 756: ...Appendix A MCU Electrical Specifications MC9S12ZVM Family Reference Manual Rev 1 3 756 Freescale Semiconductor ...
Страница 772: ...Appendix D LINPHY Electrical Specifications MC9S12ZVM Family Reference Manual Rev 1 3 772 Freescale Semiconductor ...
Страница 776: ...Appendix E GDU Electrical Specifications MC9S12ZVM Family Reference Manual Rev 1 3 776 Freescale Semiconductor ...
Страница 788: ...Appendix I MSCAN Electrical Specifications MC9S12ZVM Family Reference Manual Rev 1 3 788 Freescale Semiconductor ...
Страница 790: ...Appendix J Package Information MC9S12ZVM Family Reference Manual Rev 1 3 790 Freescale Semiconductor ...