S12ZVHY/S12ZVHL Family Reference Manual Rev. 1.05
Freescale Semiconductor
688
21.1
Introduction
The FTMRZ64K2K module implements the following:
•
64 KB of P-Flash (Program Flash) memory
•
2 KB of EEPROM memory
The Flash memory is ideal for single-supply applications allowing for field reprogramming without
requiring external high voltage sources for program or erase operations. The Flash module includes a
memory controller that executes commands to modify Flash memory contents. The user interface to the
memory controller consists of the indexed Flash Common Command Object (FCCOB) register which is
written to with the command, global address, data, and any required command parameters. The memory
controller must complete the execution of a command before the FCCOB register can be written to with a
new command.
CAUTION
A Flash word or phrase must be in the erased state before being
programmed. Cumulative programming of bits within a Flash word or
phrase is not allowed.
The Flash memory may be read as bytes and aligned words. Read access time is one bus cycle for bytes
and aligned words. For misaligned words access, the CPU has to perform twice the byte read access
command. For Flash memory, an erased bit reads 1 and a programmed bit reads 0.
It is possible to read from P-Flash memory while some commands are executing on EEPROM memory. It
is not possible to read from EEPROM memory while a command is executing on P-Flash memory.
Simultaneous P-Flash and EEPROM operations are discussed in
.
Both P-Flash and EEPROM memories are implemented with Error Correction Codes (ECC) that can
resolve single bit faults and detect double bit faults. For P-Flash memory, the ECC implementation
requires that programming be done on an aligned 8 byte basis (a Flash phrase). Since P-Flash memory is
always read by half-phrase, only one single bit fault in an aligned 4 byte half-phrase containing the byte
or word accessed will be corrected.
21.1.1
Glossary
Command Write Sequence
— An MCU instruction sequence to execute built-in algorithms (including
program and erase) on the Flash memory.
EEPROM Memory
— The EEPROM memory constitutes the nonvolatile memory store for data.
EEPROM Sector
— The EEPROM sector is the smallest portion of the EEPROM memory that can be
erased. The EEPROM sector consists of 4 bytes.
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Страница 686: ...Chapter 20 ECC Generation module SRAM_ECCV1 S12ZVHY S12ZVHL Family Reference Manual Rev 1 05 686 Freescale Semiconductor...
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Страница 774: ...Chapter 23 LIN Physical Layer S12LINPHYV2 S12ZVHY S12ZVHL Family Reference Manual Rev 1 05 774 Freescale Semiconductor...
Страница 788: ...Appendix A MCU Electrical Specifications S12ZVHY S12ZVHL Family Reference Manual Rev 1 05 788 Freescale Semiconductor...
Страница 794: ...Appendix B ADC Electricals S12ZVHY S12ZVHL Family Reference Manual Rev 1 05 794 Freescale Semiconductor...
Страница 798: ...Appendix D IRC Electrical Specifications S12ZVHY S12ZVHL Family Reference Manual Rev 1 05 798 Freescale Semiconductor...
Страница 802: ...Appendix F MSCAN Electrical Specifications S12ZVHY S12ZVHL Family Reference Manual Rev 1 05 802 Freescale Semiconductor...
Страница 806: ...Appendix G NVM Electrical Parameters S12ZVHY S12ZVHL Family Reference Manual Rev 1 05 806 Freescale Semiconductor...
Страница 810: ...Appendix H BATS Electrical Specifications S12ZVHY S12ZVHL Family Reference Manual Rev 1 05 810 Freescale Semiconductor...
Страница 816: ...Appendix K OSC32K Electrical Specifications S12ZVHY S12ZVHL Family Reference Manual Rev 1 05 816 Freescale Semiconductor...
Страница 822: ...Appendix L SPI Electrical Specifications S12ZVHY S12ZVHL Family Reference Manual Rev 1 05 822 Freescale Semiconductor...
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