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Electrical Characteristics
MFR4310 Reference Manual, Rev. 2
240
Freescale Semiconductor
A.1.6
ESD Protection and Latch-up Immunity
All ESD testing is in conformity with CDF-AEC-Q100 Stress test qualification for Automotive Grade
Integrated Circuits. During the device qualification ESD stresses were performed for the Human Body
Model (HBM), the Machine Model (MM) and the Charge Device Model.
A device is a failure if after exposure to ESD pulses the device no longer meets the device specification.
Complete DC parametric and functional testing is performed per the applicable device specification at
room temperature followed by hot temperature, unless specified otherwise in the device specification.
Table A-2. ESD and Latch-up Test Conditions
Model
Description
Symbol
Value
Unit
Human Body
Series Resistance
R1
1500
Ω
Storage Capacitance
C
100
pF
Number of Pulse per pin
positive
negative
-
-
3
3
Machine
Series Resistance
R1
0
Ω
Storage Capacitance
C
200
pF
Number of Pulse per pin
positive
negative
-
-
3
3
Latch-up
Minimum input voltage limit
-
-2.5
V
Maximum input voltage limit
-
7.5
V
Table A-3. ESD and Latch-up Protection Characteristics
Num
C
Rating
Symbol
Min
Max
Unit
1
T Human Body Model (HBM)
V
HBM
2000
-
V
2
T Machine Model (MM)
V
MM
200
-
V
3
T Charge Device Model (CDM)
V
CDM
500
-
V
4
T Latch-up Current at T
A
= 125
°
C
positive
negative
I
LAT
+100
-100
-
mA
5
T Latch-up Current at T
A
= 27
°
C
positive
negative
I
LAT
+200
-200
-
mA
Содержание FlexRay MFR4310
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