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11. DIMENSIONAL OUTLINE DRAWING (QFN4-24)

26

EPSON

S1F76980 Technical Manual (Rev.1.0)

11. DIMENSIONAL OUTLINE DRAWING (QFN4-24)

Top View

Bottom View

Dimension in Millimeters

Symbol

Min. Nom. Max.

D

-

4

-

E

- 4 -

A

-

- 1

A

1

0 -

-

b 0.17 - 0.3
e

- 0.5 -

L 0.3 - 0.5
x

-

- 0.1

y

-

- 0.05

1 = 1 mm

Index

D

E

S

A1

A

y S

e

Index

24 19

1

18

6

13

7 12

φ

b

L

Reference

«
...
28
29
30
31
32
...
»

Содержание S1F76980

Страница 1: ...Rev 1 0 SEIKO EPSON CORPORATION Power Supply IC S1F76980 Technical Manual ...

Страница 2: ...eover no license to any intellectual property rights is granted by implication or otherwise and there is no representation or warranty that anything made in accordance with this material will be free from any patent or copyright infringement of a third party This material or portions thereof may contain technology or the subject relating to strategic products under the control of the Foreign Excha...

Страница 3: ...Configuration of product number zDEVICES S1 F 76980 F 0C00 00 Packing specifications Specifications Shape F QFN Model number Model name F Power Supply Product classification S1 Semiconductors ...

Страница 4: ...nded Operating Conditions 17 9 3 Electrical Characteristics 18 9 3 1 Overall Operations 18 9 3 2 VCC Voltage Monitoring Circuit Characteristics 19 9 3 3 VBUS Voltage Monitoring Circuit Characteristics 20 9 3 4 VBAT Voltage Monitoring Circuit Characteristics 21 9 3 5 Overvoltage Limiter Characteristics 22 10 EXTERNAL CONNECTION DIAGRAMS 24 10 1 S1F76980F0A000B Recommended Connection For 1 cell Li i...

Страница 5: ...ch OFF 25 C Operating voltage 0 to 6 5V Absolute maximum rating 0 3 to 9 0V The output level of control signal is forced to be Hi Z under the output guarantee voltage Temperature characteristics Typ 100ppm C Built in power monitoring circuit VCC VBUS Detecting voltage 2 0 to 6 3V Aluminum option 0 1V steps Hysteresis width 0 05 to 1 00V Aluminum option 0 05V steps Accuracy Set voltage 3 0 Built in...

Страница 6: ... CDET FB VOUT OB2 OB1 OU2 OU1 OC2 OC1 VBUS BSEL VSS VDD CBDLY PSW VBAT VCC Power voltage monitoring circuit VCC VBAT VBUS VCC Power voltage monitoring circuit VBAT Switching control circuit Power voltage monitoring circuit VBUS IQ Power switching circuit Reference voltage generator Power on reset circuit S1F76980 ONOFSW ...

Страница 7: ...t This circuit selects a power supply VDD used in the IC from three power supplies VCC VBUS and VBAT 3 Reference voltage generator This circuit generates reference voltage and reference current necessary in this IC 4 Power on reset circuit This circuit generates IC initialization signal until the internal power supply of the IC VDD is recharged 5 Switching control circuit This circuit controls out...

Страница 8: ... Fig 6 1 Pin assignment Pin No Pin Name Pin No Pin Name 1 VCC 13 FB 2 ONOFSW 14 VBAT 3 VDD 15 PSW 4 BSEL 16 CBDLY 5 VOUT 17 IQ 6 OC1 18 BDET 7 OC2 19 TM3 8 VSS 20 CUDLY 9 OU1 21 UDET 10 OU2 22 VBUS 11 OB2 23 CSFT 12 OB1 24 CDET 1 2 3 4 24 22 21 9 8 7 23 15 13 14 5 6 10 11 12 16 17 18 20 19 TOP VIEW ...

Страница 9: ...disabled BDET O 18 Output pin used to monitor the VBAT battery power supply input voltage On Nch open drain output L Input enabled Hi Z Input disabled OC1 O 6 VCC adapter power supply input side control pin L Switch ON H Switch OFF To take measures against overvoltage operate an external MOS transistor as a regulator OC2 O 7 VCC adapter power supply output side control pin L Switch ON H Switch OFF...

Страница 10: ...upplies and the reference voltage VREF generated in the IC to the comparator for detecting voltage The comparator detects a potential difference between VREG and VREF even if it is inappreciable therefore a hysteresis circuit is added to avoid a possible defective condition due to power noise or the like In the example below the detecting voltage VDET with input voltage lowered and the release vol...

Страница 11: ...or the VBUS system power voltage monitoring The recommended value of the capacitor is approximately 50ms for 6800pF Typ Release delay setting time TUDLY ms Set coefficient 7353 C µF In case of the recommended C 6800 pF the release delay time is TUDLY 50 ms VREG VBUS CMP UDET VREF R2 R3 The power is turned off when the voltage is below the output guarantee voltage R1 Output guarantee XOFF CUDLY Not...

Страница 12: ...pproximately 1s for 6800pF However when the voltage is temporarily below the output guarantee voltage low voltage is detected even during the dead time Typ For detecting voltage 1 6V detecting voltage dead setting time TBDLY S Set coefficient 147 C µF In case of the recommended C 6800 pF the release delay time is TBDLY 1 S Typ For detecting voltage 2 8V detecting voltage dead setting time TBDLY S ...

Страница 13: ...ection system L L L OFF L L H L H L L H H H L L H L H H H L H H H Note 5 The priority sequence may be changed with the BSEL pin It can be switched even during operation of IC Note 6 L Input disabled H Input enabled 2 Switch configuration Fig 8 4 1 shows the configuration diagram of power supply selection switches that are configured outside the IC The O 1 OC1 OU1 and OB1 pin performs over voltage ...

Страница 14: ...t power supply selected backflow from VOUT prevented OB1 ON OB2 OFF OU1 OFF OU2 OFF OC1 OFF OC2 OFF State C VBAT input power supply selected full on state OB1 ON OB2 ON OU1 OFF OU2 OFF OC1 OFF OC2 OFF Description of transition conditions VBAT input enabled backflow potential between input power supply VBAT and VOUT VBAT input enabled elimination of backflow potential between input power supply VBA...

Страница 15: ...power supply selected backflow from VOUT prevented OB1 OFF OB2 OFF OU1 OFF OU2 OFF OC1 ON OC2 OFF State E VCC input power supply selected full on state OB1 OFF OB2 OFF OU1 OFF OU2 OFF OC1 ON OC2 ON Description of transition conditions VCC VBAT input enabled VCC VBAT input enabled elimination of backflow potential between input power supply VCC and VOUT Typ 19mV VCC VBAT input enabled backflow pote...

Страница 16: ...OC2 OFF State C VBAT input power supply selected full on state OB1 ON OB2 ON OU1 OFF OU2 OFF OC1 OFF OC2 OFF State D VCC input power supply selected backflow from VOUT prevented OB1 OFF OB2 OFF OU1 OFF OU2 OFF OC1 ON OC2 OFF State E VCC input power supply selected full on state OB1 OFF OB2 OFF OU1 OFF OU2 OFF OC1 ON OC2 ON State F VBAT and VCC input power supplies selected simultaneously ON ON bac...

Страница 17: ...and VOUT Typ 19mV simultaneous ON time Typ 800µs lapse VCC VBAT input enabled backflow potential between input power supply VCC and VOUT Typ 19mV simultaneous ON time Typ 800µs lapse Fig 8 4 4 VBAT VCC power switching state transition 2 Note 7 For ON ON switching input power supply is temporarily shorted We recommend OFF OFF switching however use ON ON switching on your own authority after careful...

Страница 18: ...d 10 MegΩ VOUT VREF x RFB1 RFB2 RFB2 Incoming current can be prevented by connecting a capacitor for setting the soft start time to the CSFT pin as measures against incoming current at cold start no charge in the VOUT smoothing capacitor The setting time can be obtained from the following formula Typ Soft start setting time TSFT ms Set coefficient 70 C µF For recommended C 0 01 µF soft start time ...

Страница 19: ...ircuit 2 Measures against input power supply floating Causing the floating state by removing the input power supplies VCC VBUS and VBAT may eliminate the load and reach the midpoint potential This state is not effective for the IC so we recommend that the IC be connected to a discharge resistor The recommended resistance value is between 1 and 2 2 MegΩ If a lower resistance is required depending o...

Страница 20: ... OU2 OB1 OB2 CDET UDET BDET IOX1 10 mA OC1 OU1 OB1 IOX2 100 mA OC2 OU2 OB2 Output current IXDET 10 mA CDET UDET BDET Allowable dissipation Pd 550 mW Operating temperature Topr 30 85 C Storage temperature Tstg 55 150 C Soldering temperature and time Tsol 260x10 Cxs Note 9 VDD provides the power supply with VCC VBUS and VBAT set to the highest power level Note 10 Do not externally apply the voltage ...

Страница 21: ... time setting capacitor CBDLY 6800 pF TBDLY 1s Release time setting capacitor CUDLY 6800 pF TUDLY 50ms Soft start setting capacitor CSFT 0 01 µF TSFT 0 7ms ROX1 1 4 7 MΩ OC1 OU1 OB1 ROX2 1 4 7 MΩ OC2 OU2 OB2 Pull up resistor RXDET 470 kΩ CDET UDET BDET RVCC 1 2 2 MΩ VCC RVBUS 1 2 2 MΩ VBUS Pull down resistor RVBAT 1 2 2 MΩ VBAT Total feedback resistor RFB 1 10 MΩ RFB1 RFB2 External MOS FET MOS Not...

Страница 22: ...6V VCC VBUS 0V VBAT system consumption current 2 IoprB2 27 54 µA VBAT 3 6V VCC VBUS 0V Ta 30 C to 85 C VBAT system consumption current 3 IoprB3 0 6 2 µA VBAT 2 0V VCC VBUS 0V VBAT system consumption current 4 IoprB4 0 1 1 µA VBAT PSW 3 6V VCC VBUS 0V Ta 30 C to 85 C VBAT system consumption current 5 IoprB5 16 32 µA VBAT VHIZ to BDET VCC VBUS 0V Ta 30 C to 85 C Note 16 S1F76980F0B S1F7698F0C Ta 25 ...

Страница 23: ...ission delay time TPHLC 100 µs Nch open drain output Note 32 Note 21 S1F7698F0B S1F7698F0C Detecting voltage temperature characteristics CDET Topr 100 ppm C Ta 30 C to 85 C Note 17 S1F7698F0C Release voltage temperature characteristics CDET Topr 100 ppm C Ta 30 C to 85 C Note 17 S1F7698F0C Note 17 The temperature characteristics are obtained from the following formula CDET Topr CDETH CDETL CDETM 1...

Страница 24: ...tage temperature characteristics UDET Topr 100 ppm C Ta 30 C to 85 C Note 22 Release voltage temperature characteristics UDET Topr 100 ppm C Ta 30 C to 85 C Note 22 Note 22 The temperature characteristics are obtained from the following formula UDET Topr UDETH UDETL UDETM 115 x 106 Detecting release voltage value at UDETH 85 C Detecting release voltage value at UDETL 30 C Detecting release voltage...

Страница 25: ...e 32 Note 26 S1F7698F0B S1F7698F0C Detecting voltage temperature characteristics BDET Topr 100 ppm C Ta 30 C to 85 C Note 25 S1F7698F0C Release voltage temperature characteristics BDET Topr 100 ppm C Ta 30 C to 85 C Note 25 S1F7698F0C Note 25 The temperature characteristics are obtained from the following formula BDET Topr BDETH BDETL BDETM 115 x 106 Detecting release voltage value at BDETH 85 C D...

Страница 26: ...d stability VOUT IVOUT 0 0 5 1 mV VIN VOUT 0 5V 1mA IVOUT 100mA Output voltage temperature coefficient VOUT Topr 100 ppm C VIN VOUT 1 0V IVOUT 100mA Ta 30 C to 85 C Note 21 Note 29 These characteristics are applicable when the recommended parts are connected If you use parts other than recommended ones be sure to carefully evaluate them Note 30 The temperature characteristics are obtained from the...

Страница 27: ...nical Manual Rev 1 0 EPSON 23 Note 32 Measurement of transmission delay time Nch open drain output VCC VBUS VBAT VSS VCC VBUS VBAT t VSO 5V 1 2 VSS t C U BDET TPHLC U B TPLHC U B C U BDET C U BDET VSO VSS VCC VBUS VBAT C U BDET S1F76980 series ...

Страница 28: ...nto the set before using it 21 4 1 2 3 5 6 8 9 10 11 12 13 14 16 15 17 18 19 VCC ONOFSW VDD BSEL VOUT OC1 OC2 V SS OU1 OU2 OB2 OB1 FB VBAT PSW CBDLY IQ BDET CDET CSFT V BUS UDET CUDLY TM3 S1F76980F0A000 20 22 23 6 1 CVCC 2 CVBUS 3 CVBAT 1 0µF ESR 1Ω tantalum 4 CVDD 0 1µF 5 CBDLY 6800pF 6 CUDLY 6800pF 7 CVOUT 94µF Connect 47µF capacitors in parallel 8 9 10 MOS FET NTHD2102P Manufactured by ON Semic...

Страница 29: ...SR 1Ω tantalum 4 CVDD 0 1µF 5 CBDLY 6800pF 6 CUDLY 6800pF 7 CVOUT 94µF Connect 47µF capacitors in parallel 8 9 10 MOS FET NTHD2102P Manufactured by ON Semiconductor 11 ROC1 12 ROC2 13 ROU1 14 ROU2 15 ROB1 16 ROB2 2 2MegΩ 17 RFB1 1 0MegΩ 18 RFB2 0 47MegΩ Internal reference 1 05V VOUT 3 284V targeted 19 RCDET 20 RUDET 21 RBDET 470kΩ 22 CSFT 0 01µF 23 RVCC 24 RVBUS 25 RVBAT 1MegΩ 5 23 25 1 2 3 4 7 8 ...

Страница 30: ... Technical Manual Rev 1 0 11 DIMENSIONAL OUTLINE DRAWING QFN4 24 Top View Bottom View Dimension in Millimeters Symbol Min Nom Max D 4 E 4 A 1 A1 0 b 0 17 0 3 e 0 5 L 0 3 0 5 x 0 1 y 0 05 1 1 mm Index D E S A1 A y S e Index 24 19 1 18 6 13 7 12 φb L Reference ...

Страница 31: ... 1 0 EPSON 27 12 CHARACTERISTIC DATA 12 1 S1F76980F0C000 Characteristic Data VCC system consumption current 2 VCC 6V 20 30 40 50 30 10 10 30 50 70 90 Ta C IoprC2 µA VCC system consumption current 2 VCC 3V 0 10 20 30 40 30 10 10 30 50 70 90 Ta C IoprC2 µA ...

Страница 32: ...12 CHARACTERISTIC DATA 28 EPSON S1F76980 Technical Manual Rev 1 0 VBUS system consumption current 2 VBUS 5V 15 0 20 0 25 0 30 0 35 0 40 0 30 10 10 30 50 70 90 Ta C IoprU2 µA ...

Страница 33: ...Manual Rev 1 0 EPSON 29 VBAT system consumption current 2 VBAT 3 6V 10 0 15 0 20 0 25 0 30 0 35 0 30 10 10 30 50 70 90 Ta C IoprB2 µA VBAT system consumption current 2 VBAT 2 5V 10 0 15 0 20 0 25 0 30 0 35 0 30 10 10 30 50 70 90 Ta C IoprB2 µA ...

Страница 34: ...A 30 EPSON S1F76980 Technical Manual Rev 1 0 VCC detecting voltage 2 10 2 15 2 20 2 25 2 30 2 35 2 40 30 10 10 30 50 70 90 Ta C CDET V VCC release voltage 2 20 2 25 2 30 2 35 2 40 2 45 2 50 30 10 10 30 50 70 90 Ta C CDET V ...

Страница 35: ... S1F76980 Technical Manual Rev 1 0 EPSON 31 VBUS detecting voltage 3 60 3 65 3 70 3 75 3 80 3 85 3 90 30 10 10 30 50 70 90 Ta C UDET V VBUS release voltage 3 80 3 85 3 90 3 95 4 00 4 05 4 10 30 10 10 30 50 70 90 Ta C UDET V ...

Страница 36: ...2 EPSON S1F76980 Technical Manual Rev 1 0 VBAT detecting voltage 1 45 1 50 1 55 1 60 1 65 1 70 1 75 30 10 10 30 50 70 90 Ta C BDET V VBAT release voltage 1 75 1 80 1 85 1 90 1 95 2 00 2 05 2 10 30 10 10 30 50 70 90 Ta C BDET V ...

Страница 37: ...12 CHARACTERISTIC DATA S1F76980 Technical Manual Rev 1 0 EPSON 33 VBAT output guarantee voltage 0 8 1 0 1 2 1 4 1 6 30 10 10 30 50 70 90 Ta C VHIZ V ...

Страница 38: ...h RD DongSanHuan ChaoYang District Beijing CHINA Phone 86 10 6410 6655 FAX 86 10 6410 7320 SHANGHAI BRANCH 7F High Tech Bldg 900 Yishan Road Shanghai 200233 CHINA Phone 86 21 5423 5522 FAX 86 21 5423 5512 EPSON HONG KONG LTD 20 F Harbour Centre 25 Harbour Road Wanchai Hong Kong Phone 852 2585 4600 FAX 852 2827 4346 Telex 65542 EPSCO HX EPSON Electronic Technology Development Shenzhen LTD 12 F Dawn...

Страница 39: ...Mouser Electronics Authorized Distributor Click to View Pricing Inventory Delivery Lifecycle Information Epson S1F76980F0 ...

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