22 ELECTRICAL CHARACTERISTICS
22-6
Seiko epson Corporation
S1C17F13 TeChniCal Manual
(Rev. 1.0)
OSC3B oscillation frequency-temperature characteristic
Typ. value
-50
21
19
17
15
13
11
9
7
-25
0
25
50
75
100
Ta [
°
C]
f
OSC3B
[M
Hz
]
20 MHz
16 MHz
12 MHz
8 MHz
OSC3A oscillator circuit characteristics
Unless otherwise specified: V
DD
= 2.0 to 3.6 V, V
SS
= 0 V, Ta = 25 °C
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Oscillation start time
t
sta
3A
Crystal resonator
–
–
20
ms
Ceramic resonator
–
–
1
ms
Internal gate capacitance
C
GI3
–
5
–
pF
Internal drain capacitance
C
DI3
–
5
–
pF
EXOSC external clock input characteristics
Unless otherwise specified: V
DD
= 2.0 to 3.6 V, V
SS
= 0 V, Ta = -20 to 70 °C
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
EXOSC external clock duty ratio
t
EXOSCD
t
EXOSCD
= t
EXOSCH
/t
EXOSC
46
–
54
%
High level Schmitt input threshold voltage V
T+
0.5
×
V
DD
–
0.9
×
V
DD
V
Low level Schmitt input threshold voltage V
T-
0.1
×
V
DD
–
0.5
×
V
DD
V
Schmitt input hysteresis voltage
D
V
T
180
–
–
mV
EXOSC
t
EXOSCH
t
EXOSC
= 1/f
EXOSC
V
T+
V
T+
V
T-
t
EXOSCH
t
EXOSC
= 1/f
EXOSC
V
T+
V
T+
V
T-
Flash Memory Characteristics
22.6
Unless otherwise specified: V
DD
= 2.0 to 3.6 V, V
SS
= 0 V, Ta = -20 to 70 °C
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Programming count
*
1
C
FEP
Programmed data is guaranteed to be
retained for 10 years.
50
–
–
times
*
1 Assumed that E Programming as count of 1. The count includes programming in the factory for shipment with ROM data
programmed.