MX25L6406EM2I-12G (DIGITAL_DSP : IC782)
Block diagram
7
P/N: PM1548
REV. 1.2, JUL. 02, 2010
PIN CONFIGURATIONS
SYMBOL DESCRIPTION
CS#
Chip Select
SI/SIO0 Serial Data Input (for 1 x I/O)/ Serial Data
Input & Output (for Dual Output mode)
SO/SIO1 Serial Data Output (for 1 x I/O)/ Serial Data
Output (for Dual Output mode)
Clock Input
WP#
Write protection
HOLD# Hold, to pause the device without
deselecting the device
VCC
GND
Ground
PIN DESCRIPTION
16-PIN SOP (300mil) for MX25L1606E only
8-LAND WSON (6x5mm), USON (4x4mm)
8-PIN SOP (200mil, 150mil)
8-PIN PDIP (300mil)
8
P/N: PM1548
REV. 1.2, JUL. 02, 2010
BLOCK DIAGRAM
M12L64164A-5TG2Y (DIGITAL_DSP : IC784)
Block diagram
A3V64S40GTP
64M Single Data Rate Synchronous DRAM
Revision 1.0 Dec., 2012
Page 2/39
CLK
: Master Clock
U,LDQM
: Output Disable / Write Mask
CKE
: Clock Enable
A0-11
: Address Input
/CS
: Chip Select
BA0,1
: Bank Address
/RAS
: Row Address Strobe
Vdd
: Power Supply
/CAS
: Column Address Strobe
VddQ
: Power Supply for Output
/WE
: Write Enable
Vss
: Ground
DQ0-15 : Data I/O
VssQ
: Ground for Output
BA0
BA1
Vdd
DQ0
VddQ
DQ1
DQ2
VssQ
DQ3
DQ4
VddQ
DQ5
DQ6
VssQ
DQ7
Vdd
LDQM
/WE
/CAS
/RAS
/CS
A10(AP)
A2
A3
Vdd
A0
A1
Vss
DQ15
VssQ
DQ14
DQ13
VddQ
DQ12
DQ11
VssQ
DQ10
DQ9
VddQ
DQ8
Vss
NC
UDQM
CLK
CKE
NC
A11
A8
A7
A6
A5
A4
Vss
A9
PIN CONFIGURATION (TOP VIEW)
PIN CONFIGURATION
(TOP VIEW)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
23
32
24
31
25
30
26
29
27
28
ESMT
M12L64164A (2Y)
Elite Semiconductor Memory Technology Inc.
Publication Date
:
May 2012
Revision
:
1.1
2/45
FUNCTIONAL BLOCK DIAGRAM
PIN FUNCTION DESCRIPTION
PIN
NAME
INPUT FUNCTION
CLK
System Clock
Active on the positive going edge to sample all inputs
CS
Chip Select
Disables or enables device operation by masking or enabling all
inputs except CLK , CKE and L(U)DQM
CKE
Clock Enable
Masks system clock to freeze operation from the next clock cycle.
CKE should be enabled at least one cycle prior new command.
Disable input buffers for power down in standby.
A0 ~ A11
Address
Row / column address are multiplexed on the same pins.
Row address : RA0~RA11, column address : CA0~CA7
BA1 , BA0
Bank Select Address
Selects bank to be activated during row address latch time.
Selects bank for read / write during column address latch time.
RAS
Row Address Strobe
Latches row addresses on the positive going edge of the CLK with
RAS low.
Enables row access & precharge.
CAS
Column Address Strobe
Latches column address on the positive going edge of the CLK with
CAS low.
Enables column access.
WE
Write Enable
Enables write operation and row precharge.
Latches data in starting from CAS , WE active.
L(U)DQM
Data Input / Output Mask
Makes data output Hi-Z, t
SHZ
after the clock and masks the output.
Blocks data input when L(U)DQM active.
DQ0 ~ DQ15 Data Input / Output
Data inputs / outputs are multiplexed on the same pins.
VDD / VSS
Power Supply / Ground
Power and ground for the input buffers and the core logic.
VDDQ / VSSQ Data Output Power / Ground
Isolated power supply and ground for the output buffers to provide
improved noise immunity.
NC
No Connection
This pin is recommended to be left No Connection on the device.
L(U)DQM
DQ
Mode
Register
Control
Logic
Column
Address
Buffer
&
Refresh
Counter
Row
Address
Buffer
&
Refresh
Counter
Bank D
Row
Decode
r
Bank A
Bank B
Bank C
Sense Amplifier
Column Decoder
Data Control Circuit
Latch
Circuit
Input
&
Out
put
Buf
fer
Address
Clock
Generator
CLK
CKE
Command
Deco
der
CS
RAS
CAS
WE
51
Caution in
servicing
Electrical
Mechanical
Repair Information
Updating
Содержание AVR-S730H
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