ASROCK X299 Taichi XE, Руководство пользователя

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DRAM Reference Clock
Select Auto for optimized settings.
DRAM Frequency
If [Auto] is selected, the motherboard will detect the memory module(s) inserted
and assign the appropriate frequency automatically.
Primary Timing
CAS# Latency (tCL)
The time between sending a column address to the memory and the beginning of the data
in response.
RAS# to CAS# Delay (tRCD)
RAS# to CAS# Delay : The number of clock cycles required between the opening of a row
of memory and accessing columns within it.
Row Precharge (tRP)
Row Precharge: The number of clock cycles required between the issuing of the precharge
command and opening the next row.
RAS# Active Time (tRAS)
The number of clock cycles required between a bank active command and issuing the
precharge command.
Command Rate (CR)
The delay between when a memory chip is selected and when the first active command can
be issued.
Secondary Timing
Write Recovery Time (tWR)
The amount of delay that must elapse after the completion of a valid write operation,
before an active bank can be precharged.
Refresh Cycle Time (tRFC)
The number of clocks from a Refresh command until the first Activate command to
the same rank.
RAS to RAS Delay (tRRD)
The number of clocks between two rows activated in different banks of the same
rank.