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English
H510M-HDV
H510M-HVS
RAS to RAS Delay (tRRD_L)
The number of clocks between two rows activated in different banks of the same
rank.
RAS to RAS Delay (tRRD_S)
The number of clocks between two rows activated in different banks of the same
rank.
Write to Read Delay (tWTR_L)
The number of clocks between the last valid write operation and the next read command to
the same internal bank.
Write to Read Delay (tWTR_S)
The number of clocks between the last valid write operation and the next read command to
the same internal bank.
Read to Precharge (tRTP)
The number of clocks that are inserted between a read command to a row pre-
charge command to the same rank.
Four Activate Window (tFAW)
The time window in which four activates are allowed the same rank.
CAS Write Latency (tCWL)
Configure CAS Write Latency.
Third Timing
tREFI
Configure refresh cycles at an average periodic interval.
tCKE
Configure the period of time the DDR4 initiates a minimum of one refresh
command internally once it enters Self-Refresh mode.
Turn Around Timing
Turn Around Timing Optimization
Auto is enabled in general case.
tRDRD_sg
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