185
MC95FG308 / MC95FG208
ABOV Semiconductor Co., Ltd.
15 Memory Programming
15.1 Overview
15.1.1 Description
MC95FG308 incorporates flash and data EEPROM memory to which a program can be written, erased, and
overwritten while mounted on the board. Also, data EEPROM can be programmed or erased in user program. Flash
area can be programmed in only OCD or parallel ROM mode.
Serial ISP modes and byte-parallel ROM writer mode are supported.
15.1.2 Features
•
Flash Size : 8Kbytes
•
Single power supply program and erase
•
Command interface for fast program and erase operation
•
Up to 10,000 program/erase cycles at typical voltage and temperature for flash memory
•
Up to 100,000 program/erase cycles at typical voltage and temperature for data EEPROM memory
•
Security feature
15.2 Flash and EEPROM Control and status register
Registers to control Flash and Data EEPROM are Mode Register (FEMR), Control Register (FECR), Status Register
(FESR), Time Control Register (FETCR), Address Low Register (FEARL), Address Middle Register (FEARM), address
High Register (FEARH) and Data Register (FEDR). They are mapped to SFR area and can be accessed only in
programming mode.
15.2.1 Register Map
Name
Address
Dir
Default
Description
FEMR
EAH
R/W
00H
Flash and EEPROM Mode Register
FECR
EBH
R/W
03H
Flash and EEPROM Control Register
FESR
ECH
R/W
80H
Flash and EEPROM Status Register
FETCR
EDH
R/W
00H
Flash and EEPROM Time Control Register
FEARL
F2H
R/W
00H
Flash and EEPROM Address Low Register
FEARM
F3H
R/W
00H
Flash and EEPROM Address Middle Register
FEARH
F4H
R/W
00H
Flash and EEPROM Address High Register
FEDR
F5H
R/W
00H
Flash and EEPROM Data Register
Table 15.1
Register Map
Содержание MC95FG208 Series
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Страница 23: ...23 MC95FG308 MC95FG208 ABOV Semiconductor Co Ltd Figure 4 10 16 Pin SOP Package...
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