Zener Diodes
1
Publication date: October 2007
SKE00034BED
This product complies with the RoHS Directive (EU 2002/95/EC).
MAZSxxxG Series
Silicon planar type
For constant voltage, constant current, waveform clip-
per and surge absorption circuit
■
Features
•
Low noise type
•
V
Z
rank classified(V
Z
=
2.4 V to 39 V)
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Repetitive peak forward current
I
FRM
200
mA
Total power dissipation
*
P
tot
150
mW
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
−
55 to
+
150
°
C
Note) *: With a printed circuit board
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
I
F
=
10 mA
0.9
1.0
V
Zener voltage
*2
V
Z
I
Z
Specified value
V
Reverse current
I
R
V
R
Specified value
µ
A
Zener rise operating resistance
R
ZK
I
Z
Specified value
Ω
Zener operating resistance
R
Z
I
Z
Specified value
Ω
Temperature coefficient of zener voltage
*3
S
Z
I
Z
Specified value
mV/
°
C
■
Common Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
*1
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Rated input/output frequency: 5 MHz
3. *1: The V
Z
value is for the temperature of 25
°
C. In other cases, carry out the temperature compensation.
*2: Guaranteed at 20 ms after power application.
*3: T
j
=
25
°
C to 150
°
C
1
2
Refer to the list of the
electrical characteristics
within part numbers
■
Package
•
Code
SSMini2-F4
•
Pin Name
1: Anode
2: Cathode
■
Marking Symbol
Refer to the list of the electrical
characteristics within part numbers
■
Internal Connection
