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Transistors

1

Publication date: May 2007

SJC00372AED

This product complies with the RoHS Directive (EU 2002/95/EC).

2SD1819G

Silicon NPN epitaxial planar type

For general amplification

Complementary to 2SB1218G

Features

High forward current transfer ratio h

FE

Low collector-emitter saturation voltage V

CE(sat)

S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape pacing and the magazine
pacing.

Absolute Maximum Ratings  

T

a

 

=

 25

°

C

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

V

CBO

60

V

Collector-emitter voltage (Base open)

V

CEO

50

V

Emitter-base voltage (Collector open)

V

EBO

7

V

Collector current

I

C

100

mA

Peak collector current

I

CP

200

mA

Collector power dissipation

P

C

150

mW

Junction temperature

T

j

150

°

C

Storage temperature

T

stg

55 to

 +

150

°

C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

V

CBO

I

C

 

=

 10 

µ

A, I

E

 

=

 

0

60

V

Collector-emitter voltage (Base open)

V

CEO

I

C

 

=

 2 mA, I

B

 

=

 

0

50

V

Emitter-base voltage (Collector open)

V

EBO

I

E

 

=

 10 

µ

A, I

C

 

=

 

0

7

V

Collector-base cutoff current (Emitter open)

I

CBO

V

CB

 

=

 20 V, I

E

 

=

 0

0.1

µ

A

Collector-emitter cutoff current (Base open)

I

CEO

V

CE

 

=

 10 V, I

B

 

=

 0

100

µ

A

Forward current transfer ratio

h

FE1 

*

V

CE

 = 10 V, I

C

 = 2 mA

160

460

h

FE2

V

CE

 = 2 V, I

C

 = 100 mA

90

Collector-emitter saturation voltage

V

CE(sat)

I

C

 

=

 100 mA, I

B

 

=

 10 mA

0.1

0.3

V

Transition frequency

f

T

V

CB

 

=

 10 V, I

E

 

=

 

2 mA, f 

=

 200 MHz

150

MHz

Collector output capacitance

C

ob

V

CB

 

=

 10 V, I

E

 

=

 0, f 

=

 1 MHz

3.5

pF

(Common base, input open circuited)

Electrical Characteristics  

T

a

 

=

 25

°

±

 3

°

C

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

Rank

Q

R

S

No rank

h

FE1

160 to 260

210 to 340

290 to 460

160 to 460

Marking symbol

ZQ

ZR

ZS

Z

Product of no-rank is not classified and have no marking symbol for rank.

Package

Code
SMini3-F2

Marking Symbol: Z

Pin Name

1: Base
2: Emitter
3: Collector

Содержание Transistors 2SD1819G

Страница 1: ...ollector base voltage Emitter open VCBO IC 10 µA IE 0 60 V Collector emitter voltage Base open VCEO IC 2 mA IB 0 50 V Emitter base voltage Collector open VEBO IE 10 µA IC 0 7 V Collector base cutoff current Emitter open ICBO VCB 20 V IE 0 0 1 µA Collector emitter cutoff current Base open ICEO VCE 10 V IB 0 100 µA Forward current transfer ratio hFE1 VCE 10 V IC 2 mA 160 460 hFE2 VCE 2 V IC 100 mA 9...

Страница 2: ...0 V Ta 25 C Base emitter voltage VBE V Base current I B µA 0 2 0 1 6 0 4 1 2 0 8 0 200 160 120 80 40 VCE 10 V Ta 75 C 25 C 25 C Base emitter voltage VBE V Collector current I C mA 0 1000 800 200 600 400 0 240 200 160 120 80 40 VCE 10 V Ta 25 C Base current IB µA Collector current I C mA 0 1 1 10 100 0 01 0 1 1 10 100 IC IB 10 25 C 25 C Ta 75 C Collector emitter saturation voltage V CE sat V Collec...

Страница 3: ... product complies with the RoHS Directive EU 2002 95 EC SMini3 F2 Unit mm 0 30 0 05 0 02 0 13 0 05 0 02 2 00 0 20 0 89 0 90 0 10 0 65 0 65 1 30 0 10 1 25 0 10 2 10 0 10 0 425 0 050 0 49 0 to 0 10 5 5 3 1 2 ...

Страница 4: ...ard applications intended 4 The products and product specifications described in this book are subject to change without notice for modification and or im provement At the final stage of your design purchasing or use of the products therefore ask for the most up to date Product Standards in advance to make sure that the latest specifications satisfy your requirements 5 When designing your equipmen...

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