Schottky Barrier Diodes (SBD)
Publication date: October 2008
SKH00236AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
MA3S795EG
Silicon epitaxial planar type
For switching
For wave detection
Features
High-density mounting is possible
Forward voltage V
F
, optimum for low voltage rectification:V
F
<
0.3 V
Optimum for high frequency rectification because of its short
reverse recovery time t
rr
Absolute Maximum Ratings
T
a
= 25
°
C
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
30
V
Maximum peak reverse voltage
V
RM
30
V
Forward current
Single
I
F
30
mA
Double
20
Peak forward current
Single
I
FM
150
mA
Double
110
Junction temperature
T
j
125
°
C
Storage time
T
stg
–55 to +125
°
C
Electrical Characteristics
T
a
= 25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F1
I
F
= 1 mA
0.3
V
V
F2
I
F
= 30 mA
1.0
Reverse current
I
R
V
R
= 30 V
30
m
A
Terminal capacitance
C
t
V
R
= 1 V, f = 1 MHz
1.5
pF
Reverse recovery time
*
t
rr
I
F
= I
R
= 10 mA, I
rr
= 1 mA,
R
L
= 100
W
1.0
ns
Detection efficiency
η
V
IN
= 3 V
(peak)
, f = 30 MHz
R
L
= 3.9 k
W
, C
L
= 10 pF
65
%
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz
4. *: t
rr
measurement circuit
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
=
50
Ω
Wave Form Analyzer
(SAS-8130)
R
i
=
50
Ω
t
p
=
2
µ
s
t
r
=
0.35 ns
δ =
0.05
I
F
=
10 mA
I
R
=
10 mA
R
L
=
100
Ω
10%
Input Pulse
Output Pulse
I
rr
=
1 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
Package
Code
SSMini3-F3
Pin Name
1: Anode 1
2: Anode 2
3: Cathode
Marking Symbol: M3D
Internal Connection
1
2
3
