Phototransistors
Publication date: October 2008
SHE00063AED
1
PNZ154NC
Silicon planar type
For optical control systems
Features
Fast response
Wide spectral sensitivity characteristics
Adoption of visible light cutoff resin
Absolute Maximum Ratings
T
a
= 25
°
C
Parameter
Symbol
Rating
Unit
Collector-emitter voltage (Base open)
V
CEO
20
V
Emitter-collector voltage (Base open)
V
ECO
5
V
Collector current
I
C
20
mA
Collector power dissipation
P
C
100
mW
Operating ambient temperature
T
opr
–25 to +85
°
C
Storage temperature
T
stg
–30 to +100
°
C
Electrical Characteristics
T
a
= 25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Photocurrent
*1
I
L
V
CE
= 10 V, L = 500 lx
0.7
2.0
mA
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
= 10 V
0.01
0.20
m
A
Collector-emitter saturation voltage
*1
V
CE(sat)
I
L
= 1 mA, L = 1 000 lx
0.2
0.5
V
Peak sensitivity wavelength
λ
PD
V
CE
= 10 V
850
nm
Half-power angle
θ
The angle from which photocurrent
becomes 50%
27
°
Rise time
*2
t
r
V
CC
= 10 V, I
L
= 5 mA, R
L
= 100
W
4
10
m
s
Fall time
*2
t
f
4
10
m
s
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%.
3. This device is designed by disregarding radiation.
4 *1: Source: Tungsten (color temperature 2 856 K)
*2: Switching time measurement circuit
(Input pulse)
(Output pulse)
50
Ω
R
L
t
r
: Rise time
t
f
:
Fall time
V
CC
Sig. out
10%
90%
Sig. in
t
r
t
f
