Multi Chip Discrete
Publication date: March 2008
SJF00085AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
MTM86627
Silicon P-channel MOS FET (FET)
Silicon epitaxial planar type (SBD)
For DC-DC converter
For switching circuits
Overview
MTM86627 is the composite MOS FET (P-channel MOS FET and Schttoky
Barrier Diode) that is highly suitable for DC-DC converter and other switching
circuits.
Features
Built-in schottky barrier diode: V
R
= 15 V, I
F
= 700 mA
Low on-resistance: R
on
= 80 m
W
(V
GS
= –4.0 V)
Low short-circuit input capacitance (Common source): C
iss
= 300 pF
Small package: WSSMini6-F1 (1.6 mm
×
1.6 mm
×
0.5 mm)
Low drive Voltage: 1.8 V drive
Absolute Maximum Ratings
T
a
= 25
°
C
Parameter
Symbol
Rating
Unit
FET
Drain-source surrender voltage
V
DSS
–20
V
Gate-source surrender voltage
V
GSS
±
10
V
Drain current
I
D
–2.0
A
Peak drain current
I
DP
–8.0
A
Channel temperature
T
ch
150
°
C
Storage temperature
T
stg
–55 to +150
°
C
SBD
Reverse voltage
V
R
15
V
Forward current (Average)
I
F(AV)
700
mA
Junction temperature
T
j
125
°
C
Storage temperature
T
stg
–55 to +125
°
C
Overall Total power dissipation
*
P
D
540
mW
Note) *: Measuring on ceramic substrate at 40 mm
×
38 mm
×
0.2 mm
Absolute maximum rating without heat sink for P
D
is 150 mA
Package
Code
WSSMini6-F1
Pin Name
1: Gate
4: Cathode
2: Source
5: Drain
3: Anode
6: Drain
Marking Symbol: PK
Internal Connection
1
(G)
2
(S)
3
(A)
(K)
4
(D)
5
(D)
6
