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Transistors 

Publication date: June 2007 

SJC00402AED 

1

 

This product complies with the RoHS Directive (EU 2002/95/EC).

2SC6036G

Silicon NPN epitaxial planar type

For general amplification
Complementary to 2SA2162G

 Features

 Low collector-emitter saturation voltage V

CE(sat)

 SSS-Mini type package, allowing downsizing of the equipment and automatic 

insertion through the tape packing

 Absolute Maximum Ratings  

T

a

 = 25

°

C

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

V

CBO

15

V

Collector-emitter voltage (Base open)

V

CEO

12

V

Emitter-base voltage (Collector open)

V

EBO

5

V

Collector current

I

C

500

mA

Peak collector current

I

CP

1

A

Collector power dissipation

P

C

100

mW

Junction temperature

T

j

125

°

C

Storage temperature

T

stg

–55 to +125

°

C

 Electrical Characteristics  

T

a

 = 25

°

C

±

3

°

C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

V

CBO

I

C

 = 10 

m

A, I

E

 = 0

15

V

Collector-emitter voltage (Base open)

V

CEO

I

C

 = 1 mA, I

B

 = 0

12

V

Emitter-base voltage (Collector open)

V

EBO

I

E

 = 10 

m

A, I

C

 = 0

5

V

Collector-base cutoff current (Emitter open)

I

CBO

V

CB

 = 10 V, I

E

 = 0

0.1

m

A

Forward current transfer ratio

h

FE

V

CE

 = 2 V, I

C

 = 10 mA

270

680

Collector-emitter saturation voltage

V

CE(sat)

I

C

 = 200 mA, I

B

 = 10 mA

250

mV

Transition frequency

f

T

V

CB

 = 2 V, I

E

 = –10 mA, f = 200 MHz

–10 mA, f = 200 MHz

10 mA, f = 200 MHz

200

MHz

Collector output capacitance 
(Common base, input open circuited)

C

ob

V

CB

 = 10 V, f = 1 MHz

4.5

pF

Note)  Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

 Package

 

Code

  SSSMini3-F2

 

Marking Symbol: 4U

 

Pin Name

  1: Base
  2: Emitter
  3: Collector

Summary of Contents for 2SC6036G

Page 1: ...ature Tj 125 C Storage temperature Tstg 55 to 125 C Electrical Characteristics Ta 25 C 3 C Parameter Symbol Conditions Min Typ Max Unit Collector base voltage Emitter open VCBO IC 10 mA IE 0 15 V Collector emitter voltage Base open VCEO IC 1 mA IB 0 12 V Emitter base voltage Collector open VEBO IE 10 mA IC 0 5 V Collector base cutoff current Emitter open ICBO VCB 10 V IE 0 0 1 mA Forward current t...

Page 2: ... Ta 25 C 0 0 2 0 4 0 6 0 8 1 0 1 2 1 4 0 10 20 30 40 50 60 100 70 80 90 2SC6036_ IC VBE Collector current I C mA Base emitter voltage VBE V VCE 2 V Ta 85 C 25 C 25 C 1 10 100 1000 0 01 0 1 1 2SC6036_ VCE sat IC Collector emitter saturation voltage V CE sat V Collector current IC mA IC IB 20 Ta 85 C 25 C 25 C 1 10 100 1000 0 100 200 300 400 500 700 600 2SC6036_ hFE IC Forward current transfer ratio...

Page 3: ...ct complies with the RoHS Directive EU 2002 95 EC SSSMini3 F2 Unit mm 0 30 0 05 0 02 0 20 0 05 0 02 0 13 0 05 0 02 0 4 0 4 0 80 0 05 0 80 0 05 0 51 0 04 1 20 0 05 1 20 0 05 0 20 0 05 3 1 2 0 27 5 0 to 0 05 0 5 5 ...

Page 4: ...ard applications intended 4 The products and product specifications described in this book are subject to change without notice for modification and or im provement At the final stage of your design purchasing or use of the products therefore ask for the most up to date Product Standards in advance to make sure that the latest specifications satisfy your requirements 5 When designing your equipmen...

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