©
Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 4
1
Publication Order Number:
NTB30N20/D
NTB30N20
Power MOSFET
30 Amps, 200 Volts
N−Channel Enhancement−Mode D
2
PAK
Features
•
Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
•
Avalanche Energy Specified
•
I
DSS
and R
DS(on)
Specified at Elevated Temperature
•
Mounting Information Provided for the D
2
PAK Package
•
Pb−Free Packages are Available
Typical Applications
•
PWM Motor Controls
•
Power Supplies
•
Converters
MAXIMUM RATINGS
(T
C
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage
V
DSS
200
Vdc
Drain−to−Source Voltage (R
GS
= 1.0 M
W
)
V
DGR
200
Vdc
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (t
p
v
10 ms)
V
GS
V
GSM
"
30
"
40
Vdc
Drain Current
− Continuous @ T
A
25
°
C
− Continuous @ T
A
100
°
C
− Pulsed (Note 2)
I
D
I
D
I
DM
30
22
90
Adc
Total Power Dissipation @ T
A
= 25
°
C
Derate above 25
°
C
Total Power Dissipation @ T
A
= 25
°
C (Note 1)
P
D
P
D
214
1.43
2.0
W
W/
°
C
W
Operating and Storage Temperature Range
T
J
, T
stg
−55 to
+175
°
C
Single Drain−to−Source Avalanche Energy,
Starting T
J
= 25
°
C
(V
DD
= 100 Vdc, V
GS
= 10 Vdc,
I
L
(pk) = 20 A, L = 3.0 mH, R
G
= 25
W
)
E
AS
450
mJ
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient
− Junction−to−Ambient (Note 1)
R
q
JC
R
q
JA
R
q
JA
0.7
62.5
50
°
C/W
Maximum Lead Temperature for Soldering
Purposes for 10 seconds
T
L
260
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using the minimum recommended
pad size, (Cu Area 0.412 in
2
).
2. Pulse Test: Pulse Width = 10
m
s, Duty Cycle = 2%.
1
2
3
4
D
2
PAK
CASE 418B
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
30N20
= Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
Device
Package
Shipping
†
ORDERING INFORMATION
NTB30N20
D
2
PAK
50 Units/Rail
N−Channel
D
S
G
NTB30N20T4
D
2
PAK
800 Tape & Reel
V
DSS
R
DS(ON)
TYP
I
D
MAX
200 V
68 m
W
@ V
GS
= 10 V
30 A
http://onsemi.com
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NTB30N20G
D
2
PAK
(Pb−Free)
50 Units/Rail
NTB30N20T4G
D
2
PAK
(Pb−Free)
800 Tape & Reel
30N20G
AYWW
1
Gate
3
Source
4
Drain
2
Drain
