6 Operation | 6.5 Finding Appropriate Detector Settings
ZEISS
Collector Voltage
500 V – 5 kV
2–8 mm
§
Adjustable from −250 V to +400 V
§
Standard applications: +300 V
At a high magnification, you can opti-
mize the image by varying the collector
voltage.
§
Pseudo-backscattered (BSE) image:
−250 V to −50 V
This produces a topogaphic image of the
sample with no material contrast.
5 kV – 30 kV
min. 6 mm
1. In the Crossbeam SEM Control panel, select the Imaging tab.
2. From the Signal A drop-down list, select SE2.
3. Adjust the EHT, working distance (WD), and collector voltage according to the suggestions
in the table in order to optimize the image.
6.5.4 Setting up the EsB Detector
Purpose
The EsB detector can be used to collect the backscattered electrons (BSE) signal. The BSE signal
contains information about the material contrast. In the final image, heavy elements are repre-
sented by brighter pixels and light elements are represented by darker pixels.
By adjusting the filtering grid, energy-selected BSE images can be obtained. If the filtering grid
voltage is set to 0, SE and BSE mixed images can be acquired.
Fig. 32: Silver nanoparticles embedded in zeolite, imaged at 1.5 kV
The following settings are recommended for the EsB detector:
Filtering Grid
500 V – 10 kV
0–5 mm
EsB Grid > 400 V to filter out the SE signal
20 V – 500 V
0–3 mm
EsB Grid = 0 V for use as an additional SE de-
tector
1. In the Crossbeam SEM Control panel, select the Imaging tab.
2. From the Signal A drop-down list, select ESB.
3. Adjust the EHT, working distance (WD), and EsB Grid according to the suggestions in the
table in order to optimize the image.
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Instruction Manual ZEISS Crossbeam 550L, Crossbeam 550 | en-US | Rev. 3 | 349500-8122-000
Summary of Contents for Crossbeam 550
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