Glossary
ZEISS
Glossary
aBSD
Annular Backscattered Electron Detector
Aperture
Mechanical limitation of an opening ori-
ented perpendicular to the optical axis,
which filters out electrons whose trajec-
tories (tracks) do not run close to the op-
tical axis.
aSTEM
Annular Scanning Transmission Electron
Microscopy
Astigmatism
Lens aberration that distorts the shape of
the electron beam, compensated by the
stigmator.
Beam booster
Anode and liner tube of the Gemini col-
umn are connected mechanically and
electrically forming the beam booster. A
booster voltage (UB, liner voltage) of
+8 kV is applied to the beam booster, so
that a high beam energy is maintained
throughout the entire column. The beam
booster technique has two main advan-
tages: It minimizes beam widening, that
may occur due to stochastic electron-
electron interactions. Consequently there
is almost no loss in beam brightness,
even at low acceleration voltages. Sec-
ondly, the beam booster technique en-
hances protection against external stray
fields.
BSD
Backscattered Electron Detector
BSE
Backscattered Electron
CL
Cathodoluminescence
Condenser
Device that collects and focuses the elec-
tron beam onto the specimen.
EBSD
Electron Backscatter Diffraction
EDS
Energy Dispersive X-ray Spectroscopy
EHT
Extra High Tension
Extractor
Positive electrode that attracts electrons
from the filament.
FIB
Focused Ion Beam
GIS
Gas Injection System
HV
High Vacuum
IGP
Ion Getter Pump
PC
Personal Computer
PE
Primary Electron
Primary electron beam
Narrowly bundled beam of accelerated
electrons that hit the specimen surface.
Schottky field emitter
Type of electron source in which emis-
sion occurs at or near the work function
barrier.
SE
Secondary Electron
SEM
Scanning Electron Microscope
SESI
Secondary Electron Secondary Ion
STEM
Scanning Transmission Electron Micro-
scope
6
Instruction Manual ZEISS Crossbeam 350 | en-US | Rev. 3 | 349500-8111-000
