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6.4.2.2. Using the SE2 detector
1
Select the SE2 detector.
2
Set the collector bias (voltage) in the
Detec-
tors
tab of the
SEM Control
panel.
6.5. Electron beam deposition or etching (with GIS upgrade only)
Requires a gas injection system (GIS).
Depositing and etching with the electron is a suitable method for materials that cannot be pro-
cessed with the focused ion beam, e.g. quartz masks.
Another advantage is, that there is no impairment of surfaces (i.e. no generation of amorphous
layers).
Precursor/gas
Application
Insulator, SiO
2
Deposition
Platinum, Pt
Deposition
Water
(reactive products)
Etching of material that contains carbon e.g. diamond like carbon layers (DLC)
Fluorine, XeF
2
Etching of Si-containing materials
Tungsten, W
Deposition
Summary of Contents for AURIGA Compact Crossbeam
Page 1: ...AURIGA Compact Crossbeam workstation Instruction Manual ...
Page 50: ...RM çÑ NSQ fåëíêìÅíáçå j åì ä ìêáÖ çãé Åí ÉåMP PK aÉëÅêáéíáçå ìëíçãÉê ëÉêîáÅÉ ...
Page 54: ...RQ çÑ NSQ fåëíêìÅíáçå j åì ä ìêáÖ çãé Åí ÉåMP RK fåëí ää íáçå ...
Page 150: ...NRM çÑ NSQ fåëíêìÅíáçå j åì ä ìêáÖ çãé Åí ÉåMP UK qêçìÄäÉëÜççíáåÖ mçïÉê ÅáêÅìáí ...
Page 156: ...NRS çÑ NSQ fåëíêìÅíáçå j åì ä ìêáÖ çãé Åí ÉåMP NNK ÄÄêÉîá íáçåë ...
Page 160: ...NSM çÑ NSQ fåëíêìÅíáçå j åì ä ìêáÖ çãé Åí ÉåMP NPK aÉÅä ê íáçå çÑ ÅçåÑçêãáíó ...