LEON-G100 / LEON-G200 - System Integration Manual
GSM.G1-HW-09002-G3
Preliminary
System description
Page 42 of 125
LEON-G100 /
LEON-G200
C1
SIM CARD
HOLDER
CCVCC (C1)
CCVPP (C6)
CCIO (C7)
CCCLK (C3)
CCRST (C2)
GND (C5)
C2
C3
C5
D1
D2
C
5
C
6
C
7
C
1
C
2
C
3
SIM Card
Bottom View
(contacts side)
J1
35
VSIM
33
SIM_IO
32
SIM_CLK
34
SIM_RST
C4
Figure 24: SIM interface application circuit
Reference
Description
Part Number - Manufacturer
C1, C2, C3, C4
47 pF Capacitor Ceramic COG 0402 5% 25 V
GRM1555C1H470JZ01 - Murata
C5
100 nF Capacitor Ceramic X7R 0402 10% 16 V
GRM155R71C104KA01 - Murata
D1, D2
Low capacitance ESD protection
USB0002RP or USB0002DP - AVX
J1
SIM Card Holder
Various Manufacturers,
C707-10M006-136-2 - Amphenol Corporation
Table 15: Example of components for SIM card connection
When connecting the module to a SIM card holder, perform the following steps on the application board:
Bypass digital noise via a 100 nF capacitor (e.g. Murata GRM155R71C104KA01) on the SIM supply (
VSIM
)
To prevent RF coupling, connect a 47 pF bypass capacitor (e.g. Murata GRM1555C1H470JZ01) at each SIM
signal (
VSIM
,
SIM_CLK
,
SIM_IO
,
SIM_RST
) to ground near the SIM connector
Mount very low capacitance (i.e. less than 10 pF) ESD protection devices (e.g. Infineon ESD8V0L2B-03L or
AVX USB0002RP) near the SIM card connector
Limit capacitance and series resistance on each SIM signal to match the requirements for the SIM interface
(27.7 ns is the maximum allowed rise time on the
SIM_CLK
line, 1.0 µs is the maximum allowed rise time on
the
SIM_IO
and
SIM_RST
lines): always route the connections to keep them as short as possible
1.8.1
SIM functionality
The following SIM services are supported:
Abbreviated Dialing Numbers (ADN)
Fixed Dialing Numbers (FDN)
Last Dialed Numbers (LDN)
Service Dialing Numbers (SDN)
SIM Toolkit R99 is supported.