Toshiba TCK401G, Reference Manual, Page: 14 / 15

RD002-RGUIDE-01
2018-03-07
Rev. 1
14 / 15
© 2018
Toshiba Electronic Devices & Storage Corporation
5.1.4 Pin description
Table 5.1.1 Pins of the TCK401G
5.2. SSM6K513NU
5.2.1 Overview
The SSM6K513NU is a silicon N-channel MOSFET for power management switch applications.
● High drain-source breakdown voltage: V
(BR)DSS
= 30V (min)
● Low on-resistance: R
DS(ON)
= 8.0mΩ (typical) (@V
GS
= 4.5V)
R
DS(ON)
= 6.5mΩ (typical) (@V
GS
= 10V)
5.2.2. External view and pin assignment
Figure 5.2.1 External view, marking, and pin assignment of the SSM6K513NU
5.2.3 Internal block diagram
Figure 5.2.2 Internal block diagram of the SSM6K513NU
End of Document
Pin Name Description
A1 V
GATE
Gate driver output
A2 V
IN
Supply voltage
B1 V
SRC
It is recommended to connect the V
SRC
output to the common source of
external MOSFETs.
B2 GND Ground
C1 DIS Output discharge pin
C2 V
CT
Mode Control pin
External MOSFETs turn on when V
CT
= High and turn off when V
CT
= Low.
SNA
1, 2, 5, 6: Drain
3: Gate
4: Source
Source Drain
Polarity Mark (on the top)
*Electrodes: on the bottom
Bottom view
Marking (Top view)
1, 2, 5, 6: Drain
3: Gate
4: Source