Toshiba DeviceNet nv Series, Instruction Manual, Page: 146 / 159

Appendix A Specifications
6F8C1686
130
A.1
General specifications
Table A-1 General specifications
Item Specifications Note
Operating ambient temperature 0 – 55°C,
24 hours average temperature 40°C or less
Storage temperature -40 – 70°C
Operating ambient relative humidity 10 – 95%RH Level RH2 (No condensation) (Note 1)
Dust 0.3 mg/m 3 (No conductive dust)
Pollution degree Max. 2 (No conductive pollution state) IEC 61131-2
Corrosive gas No corrosive gas
No substance containing silicon
(Note 2)
Altitude used Max. altitude 2000 m
Vibration resistance
(Vibration immunity)
Complaint with IEC 60068-2-6, test Fc
5 ≤ f < 8.4Hz: one-side amplitude 3.5mm
8.4 ≤ f < 150Hz: Constant acceleration 9.8m/s 2
10 cycles each X, Y, Z
Shock resistance
(Impact immunity)
Complaint with IEC 60068-2-27, test Ea
147m/s 2 (3 orthogonal directions-3 times each)
Natural fall Shipping packaging: 1,000 mm
Product packing condition: 300mm
Noise resistance
First transient I/O power supply, signal line IEC 61000-4-4
Electrostatic discharge 4kV (contact discharge) level ESD-3 IEC 61000-4-2
Radiated electromagnetic field 10 V/m IEC 61000-4-3
Ground Class D ground (Note 3)
Structure Openable equipment
Installation location Inside indoor control panel
<Note 1>
For long-term storage, keep spare parts etc. in a packing box in a dark place avoiding high temperature and
humidity. Temperature and humidity during long-term storage of the product should be 0 to 40°C, 20 to 80%
RH (no condensation), and the temperature change rate should be 10°C/h or less.
<Note 2>
Do not contain the following composition: Hydrogen sulfide, sulfur dioxide, chlorine gas, nitrogen oxides
(NOx), sulfur oxides (SOx), ammonia, silicon gas, etc.
<Note 3>
In case grounding other than Class D grounding, such as mesh grounding, can be applied to the system
under conditions that obtain the same as Class D grounding. Please check the effect of the grounding.