THORLABS APD430 Series, Operation Manual

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© 2015 Thorlabs 12
APD430x
5 Appendix
5.1 Technical Data
APD430A APD430A2 APD430C
Parameter
Detector Material/Type Silicon APD
UV-enhanced
Silicon APD
InGaAs APD
Wavelength Range 400 to 1000 nm 200 to 1000 nm 900 to 1700 nm
Maximum APD Responsivity
53 A/W
@ 800 nm, M = 100
50 A/W
@ 600 nm, M = 100
18 A/W
@ 1550 nm, M=20
M Factor
Temperature Stability
1
)
typ. ± 2 %; max. ± 3 %
Detector Active Area Diameter 0.5 mm 0.2 mm 0.2 mm
Transimpedance Gain
10 kV/A
5 kV/A with 50
W
Termination
Maximum Conversion Gain
5.3 x 10
5
V/W 5.0 x 10
5
V/W 1.8 x 10
5
V/W
OUTPUT Bandwidth (3 dB)
2
) DC to 400 MHz
CW Saturation Power
8.0 µW @ 800 nm
(M = 100)
80 µW @ 800 nm
(M = 10)
8.0 µW @ 600 nm
(M = 100)
80 µW @ 600 nm
(M = 10)
22 µW @ 1550 nm
(M = 20)
110 µW @ 1550 nm
(M = 4)
Maximum Input Power
(Photodiode Damage
Threshold)
1 mW 1 mW 1 mW
M Factor Adjustment Range 10 to 100 10 to 100 4 to 20
Minimum NEP
(DC - 100 MHz)
Integrated Noise
(DC - 400 MHz)
5.5 nW (RMS) 6 nW (RMS) 17 nW (RMS)
Electrical Output, Impedance
BNC, 50 W
Maximum Output Voltage
4.1 V (High Z load)
2.0 V (50
W
)
DC-Offset Electrical Output < ±3 mV
Power Supply
± 12 V, 200 mA (110/230 V switchable
General
Operating Temperature
Range
3
)
0 - 40 °C
Storage Temperature Range -40 to 70 °C
Dimensions (W x H x D) 2 x 2.5 x 1" (50.8 x 63.5 x 25.4 mm
3
)
Weight < 0.1 kg
1
) Ambient temperature within (23 ± 5)°C
2
) At maximum gain setting.
3
) Non-condensing
All technical data are valid at (23 ± 5) °C and (45 ± 15) % rel. humidity (non condensing)