Texas Instruments LMG3410-HB-EVM, User Manual Lines, Page: 18 / 26

Bill of Materials
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18 SNOU140A – April 2016 – Revised May 2017
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Using the LMG3410-HB-EVM Half-Bridge and LMG34XX-BB-EVM Breakout
Board EVM
7 Bill of Materials
Table 5. LMG3410-HB-EVM List of Materials
Qty Designator Description Part Number Manufacturer
2 C1, C16 CAP, CERM, 1 µF, 16 V, +/- 10%, X5R,
0402 EMK105BJ105KVHF Taiyo Yuden
4 C2, C6, C11, C17 CAP, CERM, 68 pF, 50 V, +/- 5%,
C0G/NP0, 0402 GRM1555C1H680JA01D MuRata
4 C3, C18, C22, C25 CAP, CERM, 0.1 µF, 50 V, +/- 10%, X7R,
0402 C1005X7R1H104K050BB TDK
2 C4, C19 CAP, CERM, 22 pF, 50 V, +/- 5%,
C0G/NP0, 0402 C1005C0G1H220J050BA TDK
2 C5, C7 CAP, CERM, 0.22 µF, 50 V, +/- 10%, X7R,
0603 C1608X7R1H224K080AB TDK
1 C8 CAP, CERM, 47 µF, 25 V, +/- 20%, X5R,
1206_190 C3216X5R1E476M160AC TDK
2 C9, C26 CAP, CERM, 2.2uF, 25V, +/-10%, X7R,
0805 GRM21BR71E225KA73L MuRata
4 C10, C12, C13, C29 CAP, CERM, 0.01uF, 630V, +/-10%, X7R,
1206 GRM31BR72J103KW01L MuRata
2 C14, C15 CAP, CERM, 0.1 µF, 1000 V, +/- 10%, X7R,
1812 C1812W104KDRACTU Kemet
6 C20, C21, C28, C30,
C31, C32 CAP, CERM, 4.7 µF, 35 V, +/- 10%, X5R,
0603 GRM188R6YA475KE15D MuRata
1 C23 CAP, CERM, 10 µF, 25 V, +/- 10%, X7R,
1206_190 C1206C106K3RACTU Kemet
2 C24, C27 CAP, CERM, 4.7 µF, 16 V, +/- 10%, X7R,
AEC-Q200 Grade 1, 0805 GCM21BR71C475KA73K MuRata
4 D2, D4, D7, D8 Diode, Schottky, 20 V, 0.5 A, SOD-123 MBR0520LT1G ON Semiconductor
2 D5, D6 Diode, Zener, 16 V, 500 mW, SOD-123 MMSZ4703T1G ON Semiconductor
1 HS1 'Cool Innovations Heat sink 1.00''x1.00'' 3-101004U Cool Innovations
1 J1 Header, 2.54mm, 6x1, Gold, R/A, TH 90121-0766 Molex
2 L1, L2 Inductor, Wirewound, 22 µH, 0.49 A, 0.56
ohm, SMD BRC2518T220K Taiyo Yuden
2 L3, L4 Coupled inductor, 0.2 A, 0.45 ohm, SMD ACM2520-601-2P-T002 TDK
2 Q1, Q2 600-V 12-A Single Channel GaN Power
Stage, RWH0032A (VQFN-32) LMG3410RWHT Texas Instruments
1 Q3 MOSFET, N-CH, 20 V, 0.75 A, SOT-23 MGSF1N02LT1G ON Semiconductor
1 R2 RES, 0, 5%, 0.1 W, 0603 CRCW06030000Z0EA Vishay-Dale
4 R3, R4, R11, R12 RES, 49.9, 1%, 0.063 W, 0402 RC0402FR-0749R9L Yageo America
1 R5 RES, 15 k, 5%, 0.063 W, 0402 CRCW040215K0JNED Vishay-Dale
1 R6 RES, 17.8 k, 1%, 0.063 W, 0402 CRCW040217K8FKED Vishay-Dale
2 R7, R8 RES, 10.0 k, 1%, 0.1 W, 0402 ERJ-2RKF1002X Panasonic
1 R9 RES, 100 k, 1%, 0.063 W, 0402 RC1005F104CS Samsung Electro-
Mechanics
2 T1, T2 Transformer, 475uH, SMT 760390014 Wurth Elektronik
1 TIM1 'Bergquist double sided thermal tape 'TI-Bond Ply100
0.005"/.127mm(1).cu-
27.0mm by 27.0mm Bergquist
3 TP1, TP2, TP3 Edge-Mount Pin, Gold 3620-1-32-15-00-00-08-0 Mill-Max
2 U1, U2 High-Performance, 8000 VPK Reinforced
Triple Digital Isolator, DW0016B ISO7831FDWR Texas Instruments
2 U3, U4 Low-Noise 1 A, 420 kHz Transformer Driver,
DBV0006A (SOT-6) SN6505BDBVR Texas Instruments
1 U5 Single 2-Input Positive-AND Gate,
DBV0005A SN74AHC1G08DBVR Texas Instruments