Texas Instruments LMG341-EVM-018, User Manual

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Bill of Materials
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18 SNOU165A – September 2018 – Revised March 2019
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Using the LMG341xEVM-018 half-bridge and LMG34XX-BB-EVM breakout
board EVM
8 Bill of Materials
Table 5. LMG341xEVM-018 List of Materials
Qty Designator Description Part Number Manufacturer
2 C1, C16 CAP, CERM, 1 uF, 25 V, +/- 10%, X5R,
0402 C1005X5R1E105K050BC TDK
4 C2, C17, C29, C31 CAP, CERM, 0.1 uF, 50 V, +/- 10%, X7R,
0402 C1005X7R1H104K050BB TDK
2 C3, C19 CAP, CERM, 22 pF, 50 V, +/- 5%,
C0G/NP0, 0402 C1005C0G1H220J050BA TDK
2 C4, C18 CAP, CERM, 10 uF, 25 V, +/- 10%, X7R,
1206_190 C1206C106K3RACTU Kemet
2 C5, C20 CAP, CERM, 0.22 uF, 50 V, +/- 10%,
X7R, 0603 C1608X7R1H224K080AB TDK
6 C6, C7, C8, C21, C22,
C23 CAP, CERM, 68 pF, 50 V, +/- 5%,
C0G/NP0, 0402 C1005C0G1H680J050BA TDK
4 C9, C10, C11, C12 CAP, CERM, 0.022 µF, 1000 V,+/- 10%,
X7R, AEC-Q200 Grade 1, 1206 C1206C223KDRACTU Kemet
2 C13, C14 CAP, CERM, 0.1 uF, 1000 V, +/- 10%,
X7R, 1812 C1812W104KDRACTU Kemet
2 C15, C24 CAP, CERM, 2.2 uF, 25 V, +/- 10%, X7R,
0805 GRM21BR71E225KA73L MuRata
6 C25, C26, C27, C28, C33,
C34 CAP, CERM, 4.7 uF, 35 V, +/- 10%, X5R,
0603 C1608X5R1V475K080AC TDK
2 C30, C32 CAP, CERM, 4.7 uF, 16 V, +/- 10%, X7R,
AEC-Q200 Grade 1, 0805 GCM21BR71C475KA73L MuRata
4 D2, D3, D6, D7 Diode, Schottky, 30 V, 0.5 A, SOD-123 B0530W-7-F Diodes Inc.
2 D4, D5 Diode, Zener, 16 V, 500 mW, AEC-Q101,
SOD-123 BZT52C16-7-F Diodes Inc.
1 H1 Heat Sink, Black Anodized, 30 x 30 mm,
20 mm high, with Push Pin and Spring UBM30-20BP-0N04 Alpha Novatech
2 H2 Mechanical spring 0.8x6.1x11.2SP Alpha Novatech,Inc.
2 H3 Mechanical push pin PIP3.175x13.2 Alpha Novatech,Inc.
1 H4 Thermal Interface Material 07-62200 Fuji Polymer Industries
1 J1 Header, 2.54mm, 6x1, Gold, R/A, TH 90121-0766 Molex
2 L1, L2 Inductor, 10 uH, 0.5 A, 0.85 ohm, SMD 74404020100 Wurth Elektronik
2 L3, L4 Coupled inductor, 0.2 A, 0.45 ohm, SMD ACM2520-601-2P-T002 TDK
2 Q1, Q2 600-V 12-A Single Channel GaN Power
Stage, RWH0032A (VQFN-32) LMG3410R050RWHT(LM
G3411R050RWHT) Texas Instruments
1 Q3 MOSFET, N-CH, 20 V, 0.75 A, SOT-23 MGSF1N02LT1G ON Semiconductor
1 R1 RES, 0, 5%, 0.1 W, 0603 MCT06030Z0000ZP500 Vishay/Beyschlag
4 R3, R4, R8, R9 RES, 49.9, 1%, 0.063 W, 0402 RC0402FR-0749R9L Yageo America
2 R5, R10 RES, 10.0 k, 1%, 0.1 W, 0402 ERJ-2RKF1002X Panasonic
1 R6 RES, 15 k, 5%, 0.063 W, AEC-Q200
Grade 0, 0402 CRCW040215K0JNED Vishay-Dale
1 R11 RES, 17.8 k, 1%, 0.063 W, AEC-Q200
Grade 0, 0402 CRCW040217K8FKED Vishay-Dale
1 R12 RES, 100 k, 1%, 0.063 W, 0402 RC1005F104CS Samsung Electro-
Mechanics
2 T1, T2 Transformer, 475uH, SMT 760390014 Wurth Elektronik
3 TP1, TP2, TP3 PCB Pin, 0.04" DIA, Edge-Mount 3620-2-32-15-00-00-08-0 Mill-Max
1 TP4 Test Point, Compact, SMT 5016 Keystone
2 U1, U3 High Speed, Robust EMC Reinforced
Triple-Channel Digital Isolator,
DBQ0016A (SSOP-16) ISO7731DBQR Texas Instruments