Texas Instruments LM5150RUMHDEVM, User Manual, Page: 13 / 18

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Bill of Materials
13 SNVU560 – August 2017
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LM5150RUMHDEVM EVM User’s Guide
8 Bill of Materials
Table 3. Bill of Materials
DESIGNATOR DESCRIPTION PART NUMBER MANUFACTURER
C1
CAP, CERM, 2200 pF, 100 V, +/-
10%, X7R, 0402
GRM155R72A222KA01D MuRata
C2, C3
CAP, CERM, 4.7 µF, 50 V, +/- 10%,
X6S, 1206
C3216X6S1H475K160AB TDK
C6, C7, C8, C9,
C10
CAP, CERM, 10 µF, 50 V, +/- 10%,
X7S, AEC-Q200 Grade 1, 1210
CGA6P3X7S1H106K250AB TDK
C11, C13
CAP, CERM, 0.1 µF, 50 V, +/- 10%,
X7R, AEC-Q200 Grade 1, 0402
CGA2B3X7R1H104K050BB TDK
C12
CAP, CERM, 1000 pF, 50 V, +/-
5%, C0G/NP0, AEC-Q200 Grade 1,
0402
CGA2B2C0G1H102J050BA TDK
C14
CAP, CERM, 4.7 µF, 16 V, +/- 10%,
X7R, 0805
GRM21BR71C475KA73L MuRata
C15
CAP, CERM, 2.2 µF, 50 V, +/- 10%,
X7R, 0805
C2012X7R1H225K125AC TDK
C16
CAP, CERM, 3900 pF, 50 V, +/-
10%, X7R, 0402
GRM155R71H392KA01D MuRata
D1
Diode, Schottky, 100 V, 20 A, AEC-
Q101, TO-277A
FSV20100V Fairchild
J1, J2, J3, J4 Test Point, Miniature, SMT 5015 Keystone
L1
Inductor, Shielded, 330 nH, 9.6 A,
0.0072 ohm, AEC-Q200 Grade 1,
SMD
784383560033 Wurth
Q1 MOSFET N-CH 60V 24A SQJ850EP-T1_GE3 Vishay
R1
RES, 2.00, 1%, 0.5 W, AEC-Q200
Grade 0, 1210
ERJ-14BQF2R0U Panasonic
R2 RES, 1.00, 1%, 0.063 W, 0402 CRCW04021R00FKED Vishay-Dale
R3 RES, 49.9, 1%, 0.063 W, 0402 CRCW040249R9FKED Vishay-Dale
R4 RES, 0.012, 1%, 1 W, 0612 PRL1632-R012-F-T1 Susumu
R5, R6, R9 RES, 0, 5%, 0.063 W, 0402 CRCW04020000Z0ED Vishay-Dale
R7 RES, 10.0, 1%, 0.063 W, 0402 MCR01MZPF10R0 Rohm
R8 RES, 6.34 k, 1%, 0.063 W, 0402 CRCW04026K34FKED Vishay-Dale
R10 RES, 9.53 k, 1%, 0.063 W, 0402 CRCW04029K53FKED Vishay-Dale
R11 RES, 29.4 k, 1%, 0.063 W, 0402 CRCW040229K4FKED Vishay-Dale
U1
Wide VIN Automotive Low IQ Boost
Controller
LM5150-Q1 Texas Instruments