Chapter 4: UEFI BIOS
77
Memory Voltage (mV)
Enter a value for Memory Voltage. To select 1.200 volts, enter 1200. The default is
1200
.
1st memory timing:
tCL
This feature configures the Cas Latency Range. Enter a number between 4-18. The default
is
15
.
tRCD
This feature selects the Row to Col Delay Range. Enter a number between 1-38. The
default is
15
.
tRP
This feature selects the Ras Precharge Range. Enter a number 1-38. The default is
15
.
tRAS
This feature selects the Ras Active Time. Enter a number between 1-586. The default is
36
.
Command Timing
This feature controls the desired memory controller command timing. The options are
1N
,
2N, and 3N.
2nd memory timing:
tWR
This feature configures the Minimum Write Recovery Time. Enter a number between 1-38.
The default is
16
.
tRFC
This feature selects the Minimum Refresh Recovery Delay Time. Enter a number between
1-9363. The default is
278
.
tRRD
This feature selects the Minimum Row Active to Row Active Delay Time. Enter a number
between 1-38. The default is
4
.
tRRD_L
Enter a value for desired tRRD_L. The default is
6
.
tWTR
This feature configures the Minimum Internal Write to Read Command Delay Time. Enter
a number between 1-38. The default is
3
.
tRTP
This feature configures the Internal Read to Precharge Command Delay Time. Enter a
number between 1-38. The default is
8
.
