STM32F103xx
Electrical characteristics
39/67
5.3.9 Memory
characteristics
Flash memory
The characteristics are given at T
A
=
−
40 to 105 °C unless otherwise specified.
Table 24.
Flash memory endurance and data retention
Table 23.
Flash memory characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
(1)
1.
Values based on characterization and not tested in production.
Unit
t
prog
Word programming time
T
A
= −
40 to +105 °C
20
40
µs
t
ERASE
Page (1kB) erase time
T
A
= −
40 to +105 °C
20
40
ms
t
ME
Mass erase time
T
A
= −
40 to +105 °C
20
40
ms
I
DD
Supply current
Read mode
f
HCLK
= 72 MHz with
2 wait states,
V
DD
= 3.3 V
20
mA
Write / Erase modes
f
HCLK
= 72 MHz,
V
DD
= 3.3 V
5
mA
Power-down mode /
HALT,
V
DD
= 3.0 to 3.6 V
50
µA
Symbol
Parameter
Conditions
Value
Unit
Min
(1)
1.
Values based on characterization not tested in production.
Typ
Max
N
END
Endurance
1
10
kcycles
t
RET
Data retention
T
A
= 85 °C
30
Years
