ST STM32F103x6, Manual

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STM32F103xx Electrical characteristics
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5.3.7 Internal clock source characteristics
The parameters given in Table 19 are derived from tests performed under ambient
temperature and V
DD
supply voltage conditions summarized in Table 7 .
High-speed internal (HSI) RC oscillator
LSI Low Speed Internal RC Oscillator
Table 19. HSI oscillator characteristics
(1)(2)
1. V
DD
= 3.3 V, T
A
=
−
40 to 105 °C unless otherwise specified.
2. TBD stands for to be determined.
Symbol Parameter Conditions Min Typ Max
(3)
3. Values based on device characterization, not tested in production.
Unit
f
HSI
Frequency 8 MHz
ACC
HSI
Accuracy of HSI oscillator
T
A
= –40 to 105 °C TBD
±
3 TBD %
at T
A
= 25°C TBD
±
1 TBD %
t
su(HSI)
HSI oscillator start up time 1 2 µs
I
DD(HSI)
HSI oscillator power
consumption
80 100 µA
Table 20. LSI oscillator characteristics
(1)
1. V
DD
= 3 V, T
A
=
−
40 to 105 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ
Max
(2)
2. Value based on device characterization, not tested in production.
Unit
f
LSI
Frequency 30 60 kHz
t
su(LSI)
LSI oscillator start up time 85 µs
I
DD(LSI)
LSI oscillator power
consumption
0.65 1.2 µA