Saia-Burgess Controls AG
Manual
Manual PCD 1 / PCD 2 Series
│ Document 26
/
737 E
N22 │ 2013-11-26
5
Input/output (I/O) modules
5-99
Combined analogue I/O modules with galvanic isolation
Technical Data
Inputs
General:
Resolution:
14 Bit
Kind of Measurement:
differential
Number of channels:
4
Galvanic isolated to Saia PCD
®
:
yes, 500 V
Galvanic isolated to external supply:
yes, 500 V
Galvanic isolated between other channels:
no
Kind of connections:
two wires per channel
How to configure mode of operation:
by DIP-Switches
Accuracy at 25 °C:
± 0.2% max.
Accuracy repetitive:
± 0.05% max.
Temperature drift (0...55 °C) max.:
± 70 ppm/°C
Over voltage protection:
± 50 V min.
Over current protection:
± 35 mA min.
Common mode voltage max:
± 50 V min.
Common mode rejection ratio:
70 dB min.
Filter:
Time constant of hardware filter:
2 ms
Attenuation of software based 50 Hz Filter:
40 dB min. between 49.5 and 50.5 Hz
Attenuation of software based 60 Hz Filter:
40 dB min. between 59.5 and 60.5 Hz
Voltage mode:
Resolution range 0 … 10 V mode:
14 Bit; 0.61 mV per LSB
Current mode:
Current shunt:
125
Ω
Resolution range 0 … 20 mA:
14 Bit; 1.22 µA per LSB
Resolution range 4 … 20 mA:
13.7 Bit; 1.22 µA per LSB
Temperature / Resistance mode:
Resolution for Pt1000; Range -50 … 400 °C
0.1 °C
Resolution for Pt500; Range -50 … 400 °C
0.2 °C
Resolution for Ni1000; Range -60 … 200 °C
0.1 °C
Resolution for Resistor; Range 0 … 2500 Ω
0.2
Ω
Power dissipation in temp. sensor / resistor:
2.5 mW max
Outputs
General:
Resolution:
12 Bit
Number of channels:
2
Galvanic isolated to Saia PCD
®
:
yes
Galvanic isolated to external supply:
yes
Galvanic isolated between other channels:
no
Kind of connections:
two wires per channel
How to configure mode of operation:
by software (FBOX, FB)
Accuracy at 25 °C:
± 0.5% max.
Accuracy repetitive:
± 0.1% max.
Temperature drift (0...55 °C) max.:
± 70 ppm/°C.
Over current protection:
short circuit protected
Time constant of filter:
1 ms
Voltage mode:
Max. load to guarantee specified accuracy:
> 700
Ω
Resolution range 0 … 10 V:
12 Bit; 2.44 mV per LSB