2003 Mar 20
11
Philips Semiconductors
Objective specification
2
×
25 W class-D power amplifier
TDA8922
9
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. See Section 16.6.
10 THERMAL CHARACTERISTICS
Note
1. See Section 16.5.
11 QUALITY SPECIFICATION
In accordance with
“General Quality Specification for Integrated Circuits: SNW-FQ-611D” if this device is used as an
audio amplifier.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
P
supply voltage
−
±
30
V
V
MODE
input voltage on pin MODE
with respect to SGND
−
5.5
V
V
sc
short-circuit voltage on output pins
−
±
30
V
I
ORM
repetitive peak current in output pin
note 1
−
4
A
T
stg
storage temperature
−
55
+150
°
C
T
amb
ambient temperature
−
40
+85
°
C
T
vj
virtual junction temperature
−
150
°
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th(j-a)
thermal resistance from junction to ambient
in free air; note 1
TDA8922TH
35
K/W
TDA8922J
35
K/W
R
th(j-c)
thermal resistance from junction to case
note 1
TDA8922TH
1.3
K/W
TDA8922J
1.3
K/W
