2002 Jan 14
30
Philips Semiconductors
Preliminary specification
4
×
44 W into 4
Ω
or 4
×
75 W into 2
Ω
quad BTL car radio power amplifier
TDA8591J
14.8
PCB design advice
handbook, full pagewidth
MGW456
10
IN1
PCB SGND
DIAG
(3)
(8)
(4)
(5)
3.3
nF
220 nF
(2)
220 nF
(1)
2
k
Ω
47
k
Ω
47
k
Ω
15
k
Ω
2
k
Ω
TDA8591J
(7)
(6)
220 nF
22 nF
12
IN2
220 nF
16
IN3
220 nF
18
20
8
3
5
6
2
22
IN4
220 nF
2200
µ
F
(16 V)
1
13 15
14
7
4
21 24 27
26
OUT1
−
22 nF
OUT1
+
22 nF
9
11
OUT2
+
22 nF
OUT2
−
22 nF
19
17
OUT3
+
22 nF
OUT3
−
22 nF
25
23
OUT4
+
22 nF
0.22
(9)
R
R
R
R
OUT4
−
GND
VP
8 to 18 V
2.2
µ
F
(6.3 V)
100
µ
F
(6.3 V)
R
C =
Fig.37 PCB design advice.
(1) Power supply high frequency capacitor to be mounted close to the IC. An SMD component is recommended.
(2) Charge pump capacitor to be mounted close to the IC between pins 14 and 7.
(3) Switch closed is the mute mode.
(4) Switch open is the standby mode.
(5) A 3.3 nF capacitor has been added to provide a smooth offset detection diagnostic.
(6) Diagnostic output is less than 0.8 V when DDD or temperature pre-warning or protection circuits are activated.
(7) Signal ground switch is closed if the source is floating. Avoid ground loops in the input signal path. Keep inputs and signal ground close together.
(8) The 22 nF capacitors on the outputs can be replaced by the capacitor on the connector block to ground, where it is often used for RF immunity and
ESD suppression.
(9) Offset detection: if R = 100 k
Ω
then C = 2.2 nF; if R = 220 k
Ω
then C = 1
µ
F. An electrolytic capacitor is not allowed because of the random phase
of the DC offset.
