1997 Mar 03
4
Philips Semiconductors
Product specification
Video output amplifier
TDA6106Q
HANDLING
Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is
desirable to take normal precautions appropriate to handling MOS devices (see
“Handling MOS Devices” ).
QUALITY SPECIFICATION
Quality specification
“SNW-FQ-611 part E” is applicable, except for ESD Human body model see Chapter “Limiting
values”, and can be found in the
“Quality reference handbook” (ordering number 9397 750 00192).
THERMAL CHARACTERISTICS
Note
1. External heatsink not required.
CHARACTERISTICS
Operating range: T
amb
=
−
20 to +65
°
C; V
DD
= 180 to 210 V (see note 1), V
om
= 1.4 to 6 V.
Test conditions: T
amb
= 25
°
C; V
DD
= 200 V; V
om
= 4 V; C
L
= 10 pF (C
L
consists of parasitic and cathode capacitance);
measured in test circuit of Fig.5; unless otherwise specified.
SYMBOL
PARAMETER
(1)
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient in free air
56
K/W
R
th j-c
thermal resistance from junction to case
12
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
DD
quiescent voltage supply current
V
ocDC
= 100 V
2.8
3.0
3.3
mA
I
bias
input bias current (pin 3)
V
ocDC
= 100 V
0
−
20
µ
A
V
int
internal reference voltage input stage V
ocDC
= 100 V
−
2.5
−
V
I
om(os)
offset current of black current
measurement output
I
oc
= 0
µ
A;
V
in
= 1.5 to +3.5 V;
V
om
= 1.4 to 6 V
−
10
0
+10
µ
A
∆
V
Tint
temperature drift of internal
reference voltage input stage
V
ocDC
= 100 V
−
0.5
−
mV/K
linearity of current transfer
I
oc
=
−
10
µ
A to 3 mA;
V
in
= 1.5 to +3.5 V;
V
om
= 1.4 to 6 V
0.9
1.0
1.1
I
of(max)
maximum peak output current (pin 9)
V
oc
= 20 V to V
DD
−
30 V
−
25
−
mA
V
oc(min)
minimum output voltage (pin 8)
V
in
= 3.5 V
−
7
12
V
V
oc(max)
maximum output voltage (pin 8)
V
in
= 1.5 V
V
DD
−
14
V
DD
−
10
−
V
GB
gain bandwidth product of open-loop
gain V
os
/V
i, dm
f = 500 kHz;
V
ocDC
= 100 V
−
0.52
−
GHz
BW
S
small signal bandwidth
V
ocAC
= 60 V (p-p);
V
ocDC
= 100 V
5
6
−
MHz
BW
L
large signal bandwidth
V
ocAC
= 100 V (p-p);
V
ocDC
= 100 V
4.7
5.7
−
MHz
∆
I
om
∆
I
oc
------------
