Philips Semiconductors
SA5211
Transimpedance amplifier (180 MHz)
Product specification
Rev. 03 — 07 October 1998
20 of 28
9397 750 07427
© Philips Electronics N.V. 2001. All rights reserved.
15.1 Die sales disclaimer
Due to the limitations in testing high frequency and other parameters at the die level,
and the fact that die electrical characteristics may shift after packaging, die electrical
parameters are not specified and die are not guaranteed to meet electrical
characteristics (including temperature range) as noted in this data sheet which is
intended only to specify electrical characteristics for a packaged device.
All die are 100% functional with various parametrics tested at the wafer level, at room
temperature only (25
°
C), and are guaranteed to be 100% functional as a result of
electrical testing to the point of wafer sawing only. Although the most modern
Fig 15. SA5211 Bonding diagram.
GND 2
GND 2
NC
INPUT
NC
GND 1
GND 1
GND 1
GND 1
OUT (+)
GND 2
OUT ()
1
2
3
4
5
6
7
8
9
10
11
12
13
14
VCC1
VCC 2
SD00488
ECN No.: 06027
1992 Mar 13
