2001 Nov 01
5
Philips Semiconductors
Product specification
860 MHz, 20 dB gain power doubler amplifier
BGD904L
Fig.2
Composite triple beat as a function of
frequency under tilted conditions.
Z
S
= Z
L
= 75
Ω
; V
B
= 24 V; 110 chs; tilt = 9 dB (50 to 550 MHz);
tilt = 3.5 dB at
−
6 dB offset (550 to 750 MHz).
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CTB
(dB)
200
−
50
−
60
−
80
−
90
−
70
52
48
40
36
44
400
600
800
MGS452
(1)
(1)
(2)
(3)
(4)
(2)
(3)
(4)
(1) V
o
.
(2) Typ. +3
σ
.
(3) Typ.
(4) Typ.
−
3
σ
.
Fig.3
Cross modulation as a function of frequency
under tilted conditions.
Z
S
= Z
L
= 75
Ω
; V
B
= 24 V; 110 chs; tilt = 9 dB (50 to 550 MHz);
tilt = 3.5 dB at
−
6 dB offset (550 to 750 MHz).
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
Xmod
(dB)
200
−
50
−
60
−
80
−
90
−
70
52
48
40
36
44
400
600
800
MGS453
(1)
(1)
(2)
(3)
(4)
(1) V
o
.
(2) Typ. +3
σ
.
(3) Typ.
(4) Typ.
−
3
σ
.
Fig.4
Composite second order distortion as a
function of frequency under tilted
conditions.
Z
S
= Z
L
= 75
Ω
; V
B
= 24 V; 110 chs; tilt = 9 dB (50 to 550 MHz);
tilt = 3.5 dB at
−
6 dB offset (550 to 750 MHz).
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CSO
(dB)
200
−
50
−
60
−
80
−
90
−
70
52
48
40
36
44
400
600
800
MGS454
(1)
(1)
(2)
(2)
(3)
(4)
(4)
(3)
(1) V
o
.
(2) Typ. +3
σ
.
(3) Typ.
(4) Typ.
−
3
σ
.
