Zener Diodes
Publication date: February 2007
SKE00031AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
MAYS0750Y
Silicon epitaxial planar type
For ESD protection of high speed signal line
Features
Maintain signal cobs with low insertion loss, distortion.
Absolute Maximum Ratings
T
a
= 25
°
C
Parameter
Symbol
Rating
Unit
Total power dissipation
*1
P
T
150
mW
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
–55 to +150
°
C
Electrostatic discharge
*2
ESD
±
8
kV
Note) *1 : P
T
= 150 mW achieved with a printed circuit board.
*2 : Test method: IEC61000-4-2
(C = 150 pF, R = 330
W
, Contact discharge: 10 times)
Electrical Characteristics
T
a
= 25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Breakdown voltage
*
V
BR
I
R
= 1 mA
6.0
7.5
V
Reverse current
I
R
V
R
= 5 V
2
m
A
Terminal capacitance
C
t
I
R
= 0 V, f = 1 MHz
0.8
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. *: V
Z
guaranted 20 ms after current
fl
ow.
Marking Symbol: CY
Unit: mm
1: Anode
2: Cathode
EIAJ: SC-79
SSMini2-F1 Package
0.80
+0.05
–0.03
0.60
+0.05
–0.03
0.12
+0.05
–0.02
1.20
+0.05 –0.03
0
+0
–0.05
0.30
±
0.05
0.01
±
0.01
1.60
±
0.05
0.01
±
0.01
1
2
0.80
±
0.05
(0.80
)
(0.60
)
(0.15
)
(0.60
)
5
°
5
°
