Schottky Barrier Diodes (SBD)
1
Publication date: October 2003
SKH00132AED
MA2SD32
Silicon epitaxial planar type
For super high speed switching
■
Features
•
I
F(AV)
= 200 mA rectification is possible.
•
Small reverse current: I
R
<
5
µ
A (at V
R
= 30 V)
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
30
V
Repetitive peak reverse voltage
V
RRM
30
V
Forward current (Average)
I
F(AV)
200
mA
Peak forward current
I
FM
300
mA
Non-repetitive peak forward
I
FSM
1
A
surge current
*
Junction temperature
T
j
125
°
C
Storage temperature
T
stg
−
55 to
+
125
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current
I
R1
V
R
=
10 V
0.5
µ
A
I
R2
V
R
=
30 V
5
Forward voltage
V
F
I
F
=
200 mA
0.49
0.56
V
Terminal capacitance
C
t
V
R
=
0 V, f
=
1 MHz
25
pF
Reverse recovery time
*
t
rr
I
F
=
I
R
=
100 mA
2
ns
I
rr
=
10 mA, R
L
=
100
Ω
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Marking Symbol: 8H
Unit: mm
0.80
+0.05
–0.03
0.60
+0.05
–0.03
0.12
+0.05
–0.02
1.20
+0.05 –0.03
0
+0
–0.05
0.30
±
0.05
0.01
±
0.01
1.60
±
0.05
0.01
±
0.01
1
2
0.80
±
0.05
(0.80)
(0.60)
(0.15)
(0.60)
5˚
5˚
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 250 MHz
4. *: t
rr
measurement circuit
1: Anode
2: Cathode
SSMini2-F1 Package
Note) * : The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
90%
t
p
=
2
µ
s
t
r
=
0.35 ns
δ
=
0.05
I
F
=
100 mA
I
R
=
100 mA
R
L
=
100
Ω
10%
Input Pulse
Output Pulse
I
rr
=
10 mA
t
r
t
p
t
rr
I
F
t
t
Bias Application Unit (N-50BU)
Pulse Generator
(PG-10N)
R
s
=
50
Ω
Wave Form
Analyzer
(SAS-8130)
R
i
=
50
Ω
V
R
A
This product complies with the RoHS Directive (EU 2002/95/EC).
