Panasonic Schottky Barrier Diodes MA2SD250G, Specifications

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Schottky Barrier Diodes (SBD)
1 Publication date: October 2007 SKH00179AED
This product complies with the RoHS Directive (EU 2002/95/EC).
MA2SD250G
Silicon epitaxial planar type
For super high speed switching
■
Features
•
Forward current (Average) I
F(AV)
=
200 mA rectification is possible
■
Absolute Maximum Ratings T
a
=
25
°
C
Parameter Symbol Rating Unit
Reverse voltage V
R
15 V
Repetitive peak reverse voltage V
RRM
15 V
Forward current (Average) I
F(AV)
200 mA
Peak forward current I
FM
300 mA
Non-repetitive peak forward I
FSM
1 A
surge current
*
Junction temperature T
j
125
°
C
Storage temperature T
stg
−
55 to
+
125
°
C
Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
F
I
F
=
200 mA 0.39 V
Reverse current I
R
V
R
=
6 V 50
µ
A
Terminal capacitance C
t
V
R
=
1 V, f
=
1 MHz 20 pF
Reverse recovery time
*
t
rr
I
F
=
I
R
=
100 mA 3 ns
I
rr
=
10 mA, R
L
=
100
Ω
■
Electrical Characteristics T
a
=
25
°
C
±
3
°
C
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
=
50
Ω
Wave Form Analyzer
(SAS-8130)
R
i
=
50
Ω
t
p
=
2
µ
s
t
r
=
0.35 ns
δ =
0.05
I
F
=
100 mA
I
R
=
100 mA
R
L
=
100
Ω
10%
Input Pulse Output Pulse
I
rr
=
10 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 250 MHz.
4. *: t
rr
measurement circuit
■
Package
•
Code
SSMini2-F4
•
Pin Name
1: Anode
2: Cathode
■
Marking Symbol: 6L