Rectifier Diodes
1
Publication date: March 2004
SKC00003BED
MA6X129
(MA129)
Silicon epitaxial planar type
For small power current rectification
■
Features
•
Three isolated elements are contained in one package, allowing
high-density mounting
•
Allowing high voltage rectification
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
I
F
=
200 mA
1.2
V
Reverse current
I
R
V
R
=
200 V
200
nA
Terminal capacitance
C
t
V
R
=
0 V, f
=
1 MHz
4.5
pF
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Note) *: t
=
l s
Marking Symbol: M4F
Note) The part number in the parenthesis shows conventional part number.
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 3 MHz.
1 : Cathode 1
4 : Anode 3
2 : Cathode 2
5 : Anode 2
3 : Cathode 3
6 : Anode 1
EIAJ : SC-74
Mini6-G1 Package
Internal Connection
6
4
1
3
5
2
2.90
1.9
±
0.1
0.16
+0.10
–0.06
2.8
+0.2 –0.3
1.1
+0.3 –0.1
1.1
0 to 0.1
+0.2 –0.1
1.50
(0.65)
0.4
±
0.2
+0.25 –0.05
(0.95)
0.30
+0.10
–0.05
0.50
+0.10
–0.05
(0.95)
6
5
4
1
3
2
+0.20
–0.05
5˚
10˚
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
200
V
Maximum peak reverse voltage
V
RM
200
V
Output current
Single
I
O
200
mA
Triple
100
Repetitive peak forward Single
I
FRM
600
mA
current
Triple
200
Non-repetitive peak
Single
I
FSM
1 000
mA
forward surge current
*
Triple
350
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
−
55
∼ +
150
°
C
This product complies with the RoHS Directive (EU 2002/95/EC).
