Rectifier Diodes
1
Publication date: March 2004
SKC00002BED
MA2J115
(MA115)
Silicon epitaxial planar type
For small power current rectification
■
Features
•
S-mini type package, allowing high-density mounting
•
High reverse voltage V
R
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
I
F
=
200 mA
1.2
V
Reverse current
I
R
V
R
=
200 V
200
nA
Terminal capacitance
C
t
V
R
=
0 V, f
=
1 MHz
4.5
pF
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
200
V
Maximum peak reverse voltage
V
RM
200
V
Output current
I
O
200
mA
Repetitive peak forward current
I
FRM
600
µ
A
Non-repetitive peak forward
I
FSM
1
A
surge current
*
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
−
55 to
+
150
°
C
Note) *: t
=
l s
Marking Symbol: 1F
Note) The part number in the parenthesis shows conventional part number.
5˚
5˚
1.25
±
0.1
0.7
±
0.1
2.5
±
0.2
1.7
±
0.1
0.4
±
0.1
0 to 0.1
(0.15)
0.16
0.5
±
0.1
1
2
+0.1
–0.06
0.35
±
0.1
0 to 0.1
Unit: mm
1: Anode
2: Cathode
EIAJ: SC-76
SMini2-F1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 3 MHz.
This product complies with the RoHS Directive (EU 2002/95/EC).
