Panasonic PIN Photodiodes PNZ334 (PN334), Specification Sheet

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SHE00042DED
This product complies with the RoHS Directive (EU 2002/95/EC).
Publication date: January 2009
1
PIN Photodiodes
PNZ334
(PN334)
Silicon planar type
For optical control systems

Features

Plastic type package ( φ 5)

High coupling capabillity suitable for plastic fi ber

High quantum ef fi ciency

High-speed response

Absolute Maximum Ratings T
a
= 25 ° C
Parameter Symbol Rating Unit
Reverse voltage V
R
30 V
Power dissipation P
D
100 mW
Operating ambient temperature T
opr
–25 to +85
° C
Storage temperature T
stg
–30 to +100 ° C

Electrical-Optical Characteristics T
a
= 25 ° C ± 3 ° C
Parameter Symbol Conditions Min Typ Max Unit
Photocurrent *1 I
L
V
R
= 10 V, L = 1 000 lx 5.0 7.0
µ A
Drain current I
D
V
R
= 10 V 0.1 10 nA
Terminal capacitance C
t
V
R
= 0 V, f = 1 MHz 6 pF
Peak sensitivity wavelength λ
PD
V
R
= 10 V 850 nm
Half-power angle θ
The angle when the photocurrent is
halved
70 °
Rise time *2 t
r
V
R
= 10 V, R
L
= 50 W
2 ns
Fall time *2 t
f
2 ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%.
3. This device is designed by disregarding radiation.
4. *1: Source: Tungsten lamp (color temperature 2 856K)
*2: Switching time measurement circuit
50 Ω
λ
P
= 900 nm
t
r
: Rise time
t
f
:
Fall time
Sig. in
R
L
V
R
Sig. out
(Input pulse)
(Output pulse)
10%
90%
t
r
t
f
Note) The part number in the parenthesis shows conventional part number.