Multi Chip Discrete
Publication date: November 2008
SJF00111AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
MTM86628
Silicon P-channel MOS FET (FET)
Silicon epitaxial planar type (SBD)
For DC-DC converter
For switching circuits
Overview
MTM86628 is the composite MOS FET (P-channel MOS FET and Schottky
Barrier Diode) that is highly suitable for DC-DC converter and other switching
circuits.
Features
Built-in schottky barrier diode: V
R
= 15 V, I
F
= 700 mA
Low on-resistance: R
on
= 300 m
W
(V
GS
= –4.0 V)
Low short-circuit input capacitance (Common source): C
iss
= 80 pF
Small surface mounting halogen-free package: WSSMini6-F1 (1.6 mm
×
1.6
mm
×
0.5 mm)
Absolute Maximum Ratings
T
a
= 25
°
C
Parameter
Symbol
Rating
Unit
FET
Drain-source surrender voltage
V
DSS
–20
V
Gate-source surrender voltage
V
GSS
±
12
V
Drain current
I
D
–1.0
A
Peak drain current
*1
I
DP
–4.0
A
Channel temperature
T
ch
150
°
C
Storage temperature
T
stg
–55 to +150
°
C
Total power dissipation
P
D1
*2
540
mW
P
D2
*3
150
mW
SBD
Reverse voltage
V
R
15
V
Forward current (Average)
I
F(AV)
700
mA
Junction temperature
T
j
125
°
C
Storage temperature
T
stg
–55 to +125
°
C
Note) *1: t = 10
µ
s, Duty Cycle < 1%
*2: Glass epoxy board: 25.4 mm
×
25.4 mm
×
0.8 mm
Copper foil of the drain portion should have a area of 300 mm
2
or more
*3: Stand-alone (without the board)
Package
Code
WSSMini6-F1
Pin Name
1: Gate
4: Cathode
2: Source
5: Drain
3: Anode
6: Drain
Marking Symbol: PL
Internal Connection
1
(G)
2
(S)
3
(A)
(K)
4
(D)
5
(D)
6
