Zener Diodes
Publication date: November 2008
SKE00020BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
MAZDxxx Series
Silicon planar type
For constant voltage, constant current, waveform clipper and
surge absorption circuit
Features
Low noise type
Absolute Maximum Ratings
T
a
= 25
°
C
Parameter
Symbol
Rating
Unit
Repetitive peak forward current
I
FRM
200
mA
Total power dissipation
*
P
T
120
mW
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
–55 to +150
°
C
Note) *: P
T
= 100 mW achieved with a printed circuit board.
Electrical Characteristics
T
a
= 25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
I
F
= 10 mA
0.9
1.0
V
Zener voltage
*
V
Z
I
Z
Specified value
Refer to the list of the
electrical characteristics
within part numbers
V
Zener operating resistance
R
Z
I
Z
Specified value
W
Reverse current
I
R
V
R
Specified value
m
A
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 5 MHz
3. The temperature must be controlled 25
°
C for V
Z
mesurement.
V
Z
value measured at other temperature must be adjusted to V
Z
(25
°
C)
4. * : V
Z
guaranted 20 ms after current flow.
Package
Code
SSSMini2-F2
Pin Name
1: Anode
2: Cathode
Marking Symbol:
Refer to the list of the electrical characteristics
within part numbers