Zener Diodes
1
Publication date: November 2005
SKE00008DED
MAZ9xxxH Series
Silicon planar type
For surge absorption circuit
■
Features
•
Two elements anode-common type
•
Power dissipation P
D
: 200 mW
■
Absolute Maximum Ratings
T
a
=
25
°
C
Unit: mm
Parameter
Symbol
Rating
Unit
Power dissipation
*
P
D
200
mW
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
−
55 to
+
150
°
C
■
Common Electrical Characteristics
T
a
=
25
°
C
± 3°
C
Note) *: P
D
= 200 mW achieved with a printed circuit board.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Zener voltage
*
V
Z
I
Z
Specified value
V
Zener rise operating resistance
R
ZK
I
Z
Specified value
Ω
Zener operating resistance
R
Z
I
Z
Specified value
Ω
Reverse current
I
R
V
R
Specified value
µ
A
0.40
+0.10
–0.05
(0.65)
1.50
+0.25 –0.05
2.8
+0.2 –0.3
2
1
3
(0.95) (0.95)
1.9
±
0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±
0.2
5˚
10˚
0 to 0.1
1.1
+0.2 –0.1
1.1
+0.3 –0.1
Refer to the list of the
electrical characteristics
within part numbers
Internal Connection
1
3
2
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Electrostatic breakdown voltage:
±
10 kV
Test method: IEC1000-4-2 (C
=
150 pF, R
=
330
Ω
, Contact discharge: 10 times)
3. *: The temperature must be controlled 25°C for V
Z
mesurement.
V
Z
value measured at other temperature must be adjusted to V
Z
(25°C)
V
Z
guaranted 20 ms after current flow.
1: Cathode 1
2: Cathode 2
3: Anode
EIAJ: SC-59
Mini3-G1 Package
This product complies with the RoHS Directive (EU 2002/95/EC).
