Schottky Barrier Diodes (SBD)
1
Publication date: June 2002
SKH00118AED
MAS3795E
Silicon epitaxial planar type
For high-speed switching circuits
■
Features
•
High-density mounting is possible
•
Optimum for high frequency rectification because of its short
reverse recovery time (t
rr
)
•
Low forward voltage V
F
optimum for low voltage rectification
V
F
=
<
0.3 V (at I
F
=
1 mA)
•
SSS-Mini type 3-pin package
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
V
R
30
V
Peak reverse voltage
V
RM
30
V
Forward current (DC) Single
I
F
30
mA
Double
20
Peak forward current
Single
I
FM
150
mA
Double
110
Junction temperature
T
j
125
°
C
Storage temperature
T
stg
−
55 to
+
125
°
C
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Internal Connection
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
I
R
V
R
=
30 V
30
µ
A
Forward voltage (DC)
V
F1
I
F
=
1 mA
0.3
V
V
F2
I
F
=
30 mA
1.0
Terminal capacitance
C
t
V
R
=
1 V, f
=
1 MHz
1.5
pF
Reverse recovery time
*
t
rr
I
F
=
I
R
=
10 mA
1.0
ns
I
rr
=
1 mA, R
L
=
100
Ω
Detection efficiency
η
V
in
=
3 V
(peak)
, f
=
30 MHz
65
%
R
L
=
3.9 k
Ω
, C
L
=
10 pF
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
R
s
=
50
Ω
Wave Form Analyzer
(SAS-8130)
R
i
=
50
Ω
t
p
=
2
µ
s
t
r
=
0.35 ns
δ =
0.05
I
F
=
10 mA
I
R
=
10 mA
R
L
=
100
Ω
10%
Input Pulse
Output Pulse
I
rr
=
1 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
Unit: mm
1.20
±
0.05
0.52
±
0.03
0 to 0.01
0.15 max.
5
°
0.15 min.
0.80
±
0.05
0.15 min.
0.33
(0.40)
(0.40)
1
2
3
5
°
0.80
±
0.05
1.20
±
0.05
+0.05
–0.02
0.10
+0.05
–0.02
0.23
+0.05
–0.02
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 2 GHz
3. *: t
rr
measuring instrument
1: Anode 1
2: Anode 2
3: Cathode 1, 2
SSSMini3-F1 Package
Marking Symbol: M3
1
2
3
This product complies with the RoHS Directive (EU 2002/95/EC).