Zener Diodes
Publication date: October 2005
SKE00038AED
1
MANV250GE
Silicon planar type
For surge protect
Features
Large surge reduction power
Absolute Maximum Ratings
T
a
= 25
°
C
Parameter
Symbol
Rating
Unit
Peak pulse power
*1
P
PP
450
W
Peak pulse current
*1
I
PP
9
A
Maximum peak reverse voltage
V
RM
18
V
Total power dissipation
*2
P
T
150
mW
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
–55 to +150
°
C
Electrostatic discharge
*3
ESD
±
30
kV
Note) *1 : Test method: IEC61000-4-5 (tp = 8/20 ms, Unrepeated)
*2: P
T
= 150 mW achieved with a printed circuit board.
*3 : Test method: IEC61000-4-2 (C = 150 pF, R = 330
W
, Contact discharge: 10 times)
Electrical Characteristics
T
a
= 25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Breakdown voltage
*1
V
BR
I
R
= 1 mA
20.0
25.0
30.0
V
Reverse current
I
R
V
R
= 18 V
10.0
m
A
Clamping voltage
*2
V
C
I
PP
= 9.0 A, tp = 8/20
m
s
50.0
V
Terminal capacitance
C
t
I
R
= 0 V, f = 1 MHz
76
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. *1: V
Z
guaranted 20 ms after current
fl
ow.
*2: Pulse Waveform
100
90
50
10
T2
T
t
T1
Percent of
I
PP
Front time:
T1 = 1.25
×
T =
8 µ
s
±
20%
Time to half value:
T2 = 20
µ
s
±
20%
Package
Code
SMini2-F3
Pin Name
1: Anode
2: Cathode
Marking Symbol: RD
