Zener Diodes
Publication date: June 2008
SKE00048AED
1
本製品は
RoHS
指令
(EU 2002/95/EC)
に対応しています。
MALM062HG
Silicon planar type
For ESD protection
Features
Electrostatic discharge ESD:
±
30 kV
Four elements anode-common type
Absolute Maximum Ratings
T
a
= 25
°
C
Parameter
Symbol
Rating
Unit
Total power dissipation
*1
P
D
150
mW
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
–55 to +150
°
C
Electrostatic discharge
*2
ESD
±
30
kV
Note) *1 : P
D
= 150 mW achieved with a printed circuit board.
*2 : Test method: IEC61000-4-2
(C = 150 pF, R = 330
W
, Contact discharge: 10 times)
Electrical Characteristics
T
a
= 25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Breakdown voltage
*
V
BR
I
R
= 1 mA
5.8
6.2
6.6
V
Reverse current
I
R
V
R
= 4.0 V
1.0
m
A
Terminal capacitance
C
t
V
R
= 0 V, f = 1 MHz
55
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. The temperature must be controlled 25
°
C for V
BR
mesurement.
V
BR
value measured at other temperature must be adjusted to V
BR
(25
°
C)
3. *: V
BR
guaranted 20 ms after current flow.
Package
Code
SSMini5-F3
Pin Name
1: Cathode 1
2: Anode 1, 2, 3, 4
3: Cathode 2
4: Cathode 3
5: Cathode 4
Marking Symbol: 6.2E
Internal Connection
3
(K2)
(K3)
4
1
(K1)
2
(A1, 2, 3, 4)
(K4)
5
