1
Publication date: March 2004
SKF00054BED
Switching Diodes
MA6X124
(MA124)
Silicon epitaxial planar type
For switching circuit
■
Features
•
Four isolated elements contained in one package, allowing high-
density mounting
•
Centrosymmetrical wiring, allowing to free from the taping direction
•
Short reverse recovery time t
rr
•
Small terminal capacitance C
t
■
Absolute Maximum Ratings
T
a
=
25
°
C
Unit : mm
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
80
V
Maximum peak reverse voltage
V
RM
80
V
Forward current
*1
I
F
100
mA
Peak forward current
*1
I
FM
225
mA
Non-repetitive peak forward
I
FSM
500
mA
surge current
*1, 2
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
−
55 to
+
150
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
I
F
=
100 mA
1.2
V
Reverse voltage
V
R
I
R
=
100
µ
A
80
V
Reverse current
I
R
V
R
=
75 V
100
nA
Terminal capacitance
C
t
V
R
=
0 V, f
=
1 MHz
2
pF
Reverse recovery time
*
t
rr
I
F
=
10 mA, V
R
=
6 V
3
ns
I
rr
=
0.1 I
R
, R
L
=
100
Ω
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
1: Anode 1
4: Anode 3
2: Cathode 1, 2, 3, 4
5: Cathode 1, 2, 3, 4
3: Anode 2
6: Anode 4
EIAJ: SC-74
Mini6-G2 Package
6
5
4
1
2
3
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
=
50
Ω
Wave Form Analyzer
(SAS-8130)
R
i
=
50
Ω
t
p
=
2
µ
s
t
r
=
0.35 ns
δ =
0.05
I
F
=
10 mA
V
R
=
6 V
R
L
=
100
Ω
10%
Input Pulse
Output Pulse
I
rr
=
0.1 I
R
t
r
t
p
t
rr
V
R
I
F
t
t
A
2.90
1.9
±
0.1
0.16
+0.10
–0.06
2.8
+0.2 –0.3
1.1
+0.3 –0.1
1.1
0 to 0.1
+0.2 –0.1
1.50
(0.65)
0.4
±
0.2
+0.25 –0.05
(0.95) (0.95)
0.30
+0.10
–0.05
6
5
4
1
3
2
+0.20
–0.05
5˚
10˚
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. *: t
rr
measurement circuit
Note) *1: Value for single diode
*2: t
=
1 s
Marking Symbol: M2C
Internal Connection
Note) The part number in the parenthesis shows conventional part number.
This product complies with the RoHS Directive (EU 2002/95/EC).
