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Schottky Barrier Diodes (SBD)

1

Publication date: April 2004

SKH00107BED

MA4X746 

(MA746)

Silicon epitaxial planar type

For super high speed switching
For small current rectification

Features

Two isolated elements are contained in one package, allowing
high-density mounting

Forward current (Average) I

F(AV)

 

=

 200 mA and Reverse voltage

V

R

 

<

 50 V are achieved

Optimum for high frequency rectification because of its short
reverse recovery time t

rr

Low forward voltage V

F

 and good rectification efficiency

Absolute Maximum Ratings  

T

a

 

=

 

25

°

C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Forward voltage

V

F1

I

F

 

=

 30 mA

0.36

V

V

F2

I

F

 

=

 200 mA

0.55

Reverse current

I

R

V

R

 

=

 50 V

200

µ

A

Terminal capacitance

C

t

V

R

 

=

 0 V, f 

=

 1 MHz

30

pF

Reverse recovery time 

*

t

rr

I

F

 

=

 I

R

 

=

 100 mA

3.0

ns

I

rr

 

=

 10 mA, R

L

 

=

 100 

Electrical Characteristics

  T

a

 

=

 

25

°

C

 

±

 

3

°

C

Parameter

Symbol

Rating

Unit

Reverse voltage

V

R

50

V

Repetitive peak reverse voltage

V

RRM

50

V

Non-repetitive peak

Single

I

FSM

1

A

forward surge current

Double 

*

0.75

Peak forward

Single

I

FM

300

mA

current

Double 

*

225

Forward current

Single

I

F(AV)

200

mA

(Average)

Double 

*

150

Junction temperature

T

j

125

°

C

Storage temperature

T

stg

55 to

 +

125

°

C

Marking Symbol: M3M

Internal Connection

4

3

2

1

Bias Application Unit (N-50BU)

90%

Pulse Generator
(PG-10N)
R

s

 

50 

Wave Form Analyzer
(SAS-8130)
R

i

 

50 

t

p

 

µ

s

t

r

 

0.35 ns

δ = 

0.05

I

F

 

=

 100 mA

I

R

 

=

 100 mA

R

L

 

=

 100 

10%

Input Pulse

Output Pulse

I

rr

 

=

 10 mA

t

r

t

p

t

rr

V

R

I

F

t

t

A

Unit: mm

1 : Cathode 1
2 : Cathode 2
3 : Anode 2
4 : Anode 1

EIAJ : SC-61

Mini4-G1 Package

2.90

+0.02

–0.05

0.16

+0.1

–0.06

0.4

±

0.2

10˚

0.60

+0.10

–0.05

1.1

+0.2 –0.1

1.1

+0.3 –0.1

1.50

+0.25 –0.05

2.8

+0.2 –0.3

1.9

±

0.2

(0.65)

(0.2)

(0.95)

(0.95)

0 to 0.1

3

4

2

1

0.5R

Note) *: Value of each diode in double diodes used.

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body

and the leakage of current from the operating equipment.

3. Absolute frequency of input and output is 1 GHz.
4. *: t

rr

 measurement circuit

Note) The part number in the parenthesis shows conventional part number.

This product complies with the RoHS Directive (EU 2002/95/EC).

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