Panasonic MA4X726 (MA726) Specification Sheet Download Page 1

Schottky Barrier Diodes (SBD)

1

Publication date: February 2005

SKH00106CED

Internal Connection

Marking Symbol: M1O

MA4X726 

(MA726)

Silicon epitaxial planar type

For super high speed switching

For small current rectification

Features

Two isolated elements are contained in one package, allowing
high-density mounting

Two MA3X721 (MA721) is contained in one package (two
diodes in a different direction)

Forward current (Average) I

F(AV)

 

=

 200 mA rectification is

possible

Absolute Maximum Ratings  

T

a

 

=

 25

°

C

Parameter

Symbol

Rating

Unit

Reverse voltage

V

R

30

V

Repetitive peak reverse voltage

V

RRM

30

V

Peak forward

Single

I

FM

300

mA

current

Series 

*1

225

Forward current

Single

I

F(AV)

200

mA

(Average)

Series 

*1

150

Non-repetitive peak

Single

I

FSM

1.00

A

forward surge current 

*2

Series 

*1

0.75

Junction temperature

T

j

150

°

C

Storage temperature

T

stg

55 to

 +

150

°

C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Forward voltage

V

F

I

F

 

=

 200 mA

0.55

V

Reverse current

I

R

V

R

 

=

 30 V

50

µ

A

Terminal capacitance

C

t

V

R

 

=

 0 V, f 

=

 1 MHz

30

pF

Reverse recovery time 

*

t

rr

I

F

 

=

 I

R

 

=

 100 mA

3.0

ns

I

rr

 

=

 10 mA, R

L

 

=

 100 

Electrical Characteristics

  T

a

 

=

 25

°

C

 

±

 

3

°

C

4

1

3

2

Bias Application Unit (N-50BU)

90%

Pulse Generator
(PG-10N)
R

s

 

50 

Wave Form Analyzer
(SAS-8130)
R

i

 

50 

t

p

 

µ

s

t

r

 

0.35 ns

δ = 

0.05

I

F

 

100 mA

I

R

 

100 mA

R

L

 

100 

10%

Input Pulse

Output Pulse

I

rr

 

10 mA

t

r

t

p

t

rr

V

R

I

F

t

t

A

Unit: mm

1: Cathode 1
2: Anode 2
3: Cathode 2
4: Anode 1

EIAJ: SC-61

Mini4-G1 Package

2.90

+0.02

–0.05

0.16

+0.1

–0.06

0.4

±

0.2

10˚

0.60

+0.10

–0.05

1.1

+0.2 –0.1

1.1

+0.3 –0.1

1.50

+0.25 –0.05

2.8

+0.2 –0.3

1.9

±

0.2

(0.65)

(0.2)

(0.95)

(0.95)

0 to 0.1

3

4

2

1

0.5R

Note) *1: Value of each diode in series diodes used.

*2: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body

and the leakage of current from the operating equipment.

3. Absolute frequency of input and output is 1 GHz.

4. *: t

rr

 measurement circuit

Note) The part number in the parenthesis shows conventional part number.

This product complies with the RoHS Directive (EU 2002/95/EC).

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